S32K311NHT0MPAST datasheet(75/143 Pages) NXP

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Table 31. Flash memory module life specifications (continued)

Symbol

Characteristic

Conditions

Min

Typical

Units

Data

retention

Minimum data retention.

Blocks with 0 - 1,000

P/E cycles.

—

Years

Blocks with 100,000

P/E cycles.

—

Years

1. Program and erase supported for factory conditions. Nominal supply values and operation at 25°C.

9.3.1 Data retention vs program/erase cycles

Graphically, Data Retention versus Program/Erase Cycles can be represented by the following figure.

The spec window represents qualified limits.

P/E Cycles (Sector Erases)

100

1000

10000

100000

1000000

Figure 34. Data retention vs program/erase cycles

9.4 Flash memory AC timing specifications

Table 32. Flash memory AC timing specifications

Symbol

Characteristic

Min

Typical

Max

Units

tdone

Time from 0 to 1 transition on the MCR[EHV] bit

initiating a program/erase until the MCR[DONE]

bit is cleared.

—

tdones

Time from 1 to 0 transition on the MCR[EHV] bit

aborting a program/erase until the MCR[DONE]

bit is set to a 1.

5 plus four

system clock

periods

—

22 plus four

system clock

periods1

µs

tdrcv

Time to recover once exiting low power mode.

14 plus seven

system clock

periods2

17.5 plus

seven system

clock periods

21 plus seven

system clock

periods

µs

Table continues on the next page...

NXP Semiconductors

Flash memory specification

S32K3xx Data Sheet, Rev. 9.1, 03/2024

Data Sheet: Technical Data

Preliminary Information for S32K388

75 / 143

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