6.4 Thermal Information

THERMAL METRIC(1)

TPSM861253

UNIT

RDX

7 PINS

RθJA

Junction-to-ambient thermal resistance

61.3

°C/W

RθJA_effective

Junction-to-ambient thermal resistance on EVM board

40(2)

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

60.8

°C/W

RθJB

Junction-to-board thermal resistance

20.0

°C/W

ΨJT

Junction-to-top characterization parameter

7.5

°C/W

ΨJB

Junction-to-board characterization parameter

19.2

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

(2)

This RθJA_effective is tested on TPSM861253EVM board (4 layer board, copper thickness of top and bottom layer are 2oz, and

copper thickness of internal GND is 1oz) at Vin = 12V, Vout = 5V, Iout = 1A , TA = 25oC.

6.5 Electrical Characteristics

Over operating TJ = –40oC – 125oC, VVIN = 12V (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

INPUT SUPPLY VOLTAGE

VIN

Input voltage range

VIN

3.8

17

V

IVIN

VIN supply current

No load, VEN = 5V, non-switching, FCCM

version

370

µA

IINSDN

VIN shutdown current

No load, VEN = 0V

2

µA

UVLO

UVLO

VIN undervoltage lockout

Wake up VIN voltage

2.8

2.9

3.0

V

UVLO

VIN undervoltage lockout

Shut down VIN voltage

2.6

2.7

2.8

V

UVLO

VIN undervoltage lockout

Hysteresis VIN voltage

200

mV

FEEDBACK VOLTAGE

VOUT

TPSM861253 output voltage

TJ = 0°C to 65°C

3.27

3.3

3.33

V

VOUT

TPSM861253 output voltage

TJ = –40°C to 125°C

3.25

3.3

3.35

V

MOSFET

RDS

(ON)HI

High-side MOSFET Rds(on)

TJ = 25°C, VVIN ≥ 5V

55

mΩ

TJ = 25°C, VVIN = 3V (1)

68

mΩ

RDS

(ON)LO

Low-side MOSFET Rds(on)

TJ = 25°C,VVIN ≥ 5V

24

mΩ

TJ = 25°C, VVIN = 3V

30

mΩ

DUTY CYCLE and FREQUENCY CONTROL

FSW

Switching frequency

TJ = 25°C, VVOUT = 3.3V

1.4

MHz

TOFF(MIN)

(1)

Minimum off-time

VFB = 0.5V

110

ns

TON(MIN) Minimum on-time

60

ns

CURRENT LIMIT

IOCL_LS

Over current threshold

Valley current set point

1.5

2.3

2.9

A

INOCL

Negative over current threshold

Valley current set point

1.5

2.0

2.5

A

LOGIC THRESHOLD

VEN(ON)

EN threshold high-level

1.15

1.20

1.25

V

VEN(OFF) EN threshold low-level

0.90

1.00

1.10

V

VENHYS

EN hystersis

200

mV

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TPSM861253

SLUSFD2A – SEPTEMBER 2023 – REVISED JANUARY 2024

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