M750000004 datasheet(123/129 Pages) SPANSION

123 / 129 page

January 14, 2004

Am75PDL191CHHa/Am75PDL193CHHa

121

ADV ANCE

I N FO RMAT I O N

PSRAM AC CHARACTERISTICS

Figure 28.

Standby Mode State Machines

Standby Mode Characteristic

AC Characteristics (V

CC= 2.7-3.1 V, TA= -40 to 85°C)

WP (min)= 70 ns for continuous write operation over 50 times.

CS2s =V

CS#1s =V

CS #1=V IL, UB or/and LB=VIL

Power On

Initial State

(Wait 200

µs)

Active

Standby

Mode

Deep Power

Down Mode

CS2s =V

CS#1s=V IH and CS2s =VIH

CS2s =V

CS#1s =V

, CS2s =VIH

CS2s =V

Power Mode

Memory Cell Data

Standby Current (

µA)

Wait Time (

µs)

Standby

Valid

Deep Power Down

Invalid

200

Parameter List

Symbol

Speed Bins

Units

70 ns

Min

Max

Read

Read Cycle Time

Address Access Time

-70

Chip Select to Output

-70

Output Enable to Valid Output

-35

UB#, LB# Access Time

-70

Chip Select to Low-Z Output

UB#, LB# Enable to Low-Z Output

BLZ

Output Enable to Low-Z Output

OLZ

Chip Disable to High-Z Output

025

UB#, LB# Disable to High-Z Output

BHZ

025

Output Disable to High-Z Output

OHZ

025

Output Hold from Address Change

Write

Write Cycle Time

Chip Select to End of Write

Address Set-up Time

Address Valid to End of Write

UB#, LB# Valid to End of Write

Write Pulse Width

(Note 1)

-ns

Write Recovery Time

Write to Output High-Z

WHZ

025

Data to Write Time Overlap

Data Hold from Write Time

End Write to Output Low-Z

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