Low profile package

Ideal for automated placement

Glass passivated chip junction

High forward surge capability

Super Fast reverse recovery time

Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

For use in high frequency rectification of power

supplies, inverters, converters, and freewheeling diodes for

consumer and telecommunication.

Package: DO-214AC (SMA)

Molding compound meets UL 94 V-0 flammability

rating, RoHS-compliant, halogen-free

Terminals: Tin plated leads, solderable per

J-STD-002 and JESD22-B102

Polarity: Cathode line denotes the cathode end

PARAMETER

SYMBOL UNIT

ES1A ES1B ES1C

ES1D

ES1F

ES1G

ES1H

ES1J ES1K

Device marking code

ES1A ES1B

ES1C

ES1D

ES1F

ES1G

ES1H

ES1J

ES1K

Repetitive peak reverse voltage

VRRM

V

50

100

150

200

300

400

500

600

800

Average rectified output current

@ 60Hz sine wave, Resistance load, TL

(FIG.1)

IO

A

1.0

Surge(non-repetitive)forward current

@ 60Hz Half-sine wave,1 cycle, Ta=25

IFSM

A

30

Storage temperature

Tstg

-55~+150

Junction temperature

Tj

-55~+150

PARAMETER

SYMBOL UNIT

TEST

CONDITIONS

ES1A ES1B ES1C ES1D ES1F ES1G ES1H ES1J ES1K

Maximum instantaneous

forward voltage drop per diode

VF

V

IFM=1.0A

0.95

1.3

1.7

1.85

Maximum reverse recovery time

TRR

ns IF=0.5A,IR=1.0A,

Irr=0.25A

35

Maximum DC reverse current at

rated DC blocking voltage per diode

@ VRM=VRRM

IRRM

A

Ta=25

5

Ta=125

100

Surface Mount Super Fast Recifier Diodes

ES1A Through ES1K

DO-214AC

FEATURES

TYPICAL APPLICATIONS

MECHANICAL DATA

MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS

THERMAL CHARACTERISTICS

(Ta=25 Unless otherwise specified

(Ta=25 Unless otherwise specified

(Ta=25 Unless otherwise specified

PARAMETER

SYMBOL

UNIT

ES1A

ES1B

ES1C

ES1D ES1F ES1G ES1H

ES1J

ES1K

Thermal Resistance

R J-A

/W

651)

R J-L

201)

R J-C

251)

Note:

Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper

pad areas

S-S751

08-12-2020

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