công cụ tìm kiếm bảng dữ liệu linh kiện điện tử
  Vietnamese  ▼
ALLDATASHEET.VN

X  

NID9N05CL bảng dữ liệu(PDF) 3 Page - ON Semiconductor

tên linh kiện NID9N05CL
Giải thích chi tiết về linh kiện  Power MOSFET
PDF  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
nhà sản xuất  ONSEMI [ON Semiconductor]
Trang chủ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NID9N05CL bảng dữ liệu(HTML) 3 Page - ON Semiconductor

  NID9N05CL Datasheet HTML 1Page - ON Semiconductor NID9N05CL Datasheet HTML 2Page - ON Semiconductor NID9N05CL Datasheet HTML 3Page - ON Semiconductor NID9N05CL Datasheet HTML 4Page - ON Semiconductor NID9N05CL Datasheet HTML 5Page - ON Semiconductor NID9N05CL Datasheet HTML 6Page - ON Semiconductor NID9N05CL Datasheet HTML 7Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 3 / 7 page
background image
NID9N05CL
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Unit
Max
Typ
Min
Symbol
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
(VGS = 10 V, VDD = 40 V,
ID = 9.0 A, RG = 9.0 W)
td(on)
−
130
200
ns
Rise Time
tr
−
500
750
Turn−Off Delay Time
td(off)
−
1300
2000
Fall Time
tf
−
1150
1850
Turn−On Delay Time
(VGS = 10 V, VDD = 15 V,
ID = 1.5 A, RG = 2 kW)
td(on)
−
200
−
ns
Rise Time
tr
−
500
−
Turn−Off Delay Time
td(off)
−
2500
−
Fall Time
tf
−
1800
−
Turn−On Delay Time
(VGS = 10 V, VDD = 15 V,
ID = 1.5 A, RG = 50 W)
td(on)
−
120
−
ns
Rise Time
tr
−
275
−
Turn−Off Delay Time
td(off)
−
1600
−
Fall Time
tf
−
1100
−
Gate Charge
(VGS = 4.5 V, VDS = 40 V,
ID = 9.0 A) (Note 3)
QT
−
4.5
7.0
nC
Q1
−
1.2
−
Q2
−
2.7
−
Gate Charge
(VGS = 4.5 V, VDS = 15 V,
ID = 1.5 A) (Note 3)
QT
−
3.6
−
nC
Q1
−
1.0
−
Q2
−
2.0
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 4.5 A, VGS = 0 V) (Note 3)
(IS = 4.0 A, VGS = 0 V)
(IS = 4.5 A, VGS = 0 V, TJ = 125°C)
VSD
−
−
−
0.86
0.845
0.725
1.2
−
−
V
Reverse Recovery Time
(IS = 4.5 A, VGS = 0 V,
dIs/dt = 100 A/ms) (Note 3)
trr
−
700
−
ns
ta
−
200
−
tb
−
500
−
Reverse Recovery Stored Charge
QRR
−
6.5
−
mC
ESD CHARACTERISTICS
Electro−Static Discharge
Capability
Human Body Model (HBM)
ESD
5000
−
−
V
Machine Model (MM)
500
−
−
3. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.



Html Pages

1 2 3 4 5 6 7


bảng dữ liệu tải về

Go To PDF Page


Link URL



Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không?  [ DONATE ] 

Alldatasheet là   |   Quảng cáo   |   Liên lạc với chúng tôi   |   Chính sách bảo mật   |   Liên kết đến bảng dữ liệu    |   Trao đổi link   |   Tìm kiếm theo nhà sản xuất
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com