NID9N05CL datasheet(2/7 Pages) ONSEMI

2 / 7 page

NID9N05CL

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

(VGS = 0 V, ID = 1.0 mA, TJ = 25°C)

(VGS = 0 V, ID = 1.0 mA, TJ = −40°C to 125°C)

Temperature Coefficient (Negative)

V(BR)DSS

50.8

−

−10

59.5

−

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 40 V, VGS = 0 V)

(VDS = 40 V, VGS = 0 V, TJ = 125°C)

IDSS

−

Gate−Body Leakage Current

(VGS = ±8 V, VDS = 0 V)

(VGS = ±14 V, VDS = 0 V)

IGSS

−

±22

±10

−

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage (Note 3)

(VDS = VGS, ID = 100 mA)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.3

−

1.75

−4.5

2.5

−

mV/

°C

Static Drain−to−Source On−Resistance (Note 3)

(VGS = 4.0 V, ID = 1.5 A)

(VGS = 3.5 V, ID = 0.6 A)

(VGS = 3.0 V, ID = 0.2 A)

(VGS = 12 V, ID = 9.0 A)

(VGS = 12 V, ID = 12 A)

RDS(on)

−

153

175

−

181

364

1210

−

Forward Transconductance (Note 3) (VDS = 15 V, ID = 9.0 A)

gFS

−

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 40 V, VGS = 0 V, f = 10 kHz)

Ciss

−

155

250

Output Capacitance

Coss

−

100

Transfer Capacitance

Crss

−

Input Capacitance

(VDS = 25 V, VGS = 0 V, f = 10 kHz)

Ciss

−

175

−

Output Capacitance

Coss

−

Transfer Capacitance

Crss

−

3. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

NID9N05CL bảng dữ liệu(PDF) 2 Page - ON Semiconductor

NID9N05CL bảng dữ liệu(HTML) 2 Page - ON Semiconductor

Html Pages

1 2 3 4 5 6 7

bảng dữ liệu tải về

Link URL