NID9N05CL datasheet(1/7 Pages) ONSEMI

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April, 2006 − Rev. 7

1

Publication Order Number:

NID9N05CL/D

NID9N05CL

Power MOSFET

9.0 A, 52 V, N−Channel, Logic Level,

Clamped MOSFET w/ESD Protection

in a DPAK Package

Benefits

• High Energy Capability for Inductive Loads

• Low Switching Noise Generation

Features

• Diode Clamp Between Gate and Source

• ESD Protection − HBM 5000 V

• Active Over−Voltage Gate to Drain Clamp

• Scalable to Lower or Higher RDS(on)

• Internal Series Gate Resistance

• Pb−Free Packages are Available

Applications

• Automotive and Industrial Markets:

Solenoid Drivers, Lamp Drivers, Small Motor Drivers

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage Internally Clamped

VDSS

52−59

V

Gate−to−Source Voltage − Continuous

VGS

±15

V

Drain Current − Continuous @ TA = 25°C

Drain Current − Single Pulse (tp = 10 ms)

ID

IDM

9.0

35

A

Total Power Dissipation @ TA = 25°C

PD

28.8

W

Operating and Storage Temperature Range

TJ, Tstg

−55 to 175

°C

Single Pulse Drain−to−Source Avalanche

Energy − Starting TJ = 125°C

(VDD = 50 V, ID(pk) = 1.5 A, VGS = 10 V,

RG = 25 W)

EAS

160

mJ

Thermal Resistance, Junction−to−Case

Junction−to−Ambient (Note 1)

Junction−to−Ambient (Note 2)

RqJC

RqJA

5.2

72

100

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8

″ from Case for 10 seconds

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to a FR4 board using 1

″ pad size, (Cu area 1.127 in2).

2. When surface mounted to a FR4 board using minimum recommended pad

size, (Cu area 0.412 in2).

Device

Package

Shipping†

ORDERING INFORMATION

NID9N05CLT4

DPAK

2500/Tape & Reel

DPAK

CASE 369C

STYLE 2

MPWR

Drain

(Pins 2, 4)

Source

(Pin 3)

Gate

(Pin 1)

MARKING

DIAGRAM

Y

= Year

WW

= Work Week

D9N05CL = Device Code

G

= Pb−Free Package

RG

Overvoltage

Protection

ESD Protection

http://onsemi.com

1 = Gate

2 = Drain

3 = Source

4 = Drain

1

2

3

4

NID9N05CL

DPAK

75 Units/Rail

YWW

D9N

05CLG

VDSS

(Clamped)

RDS(ON) TYP

ID MAX

(Limited)

52 V

90 m

W

9.0 A

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

NID9N05CLG

DPAK

(Pb−Free)

75 Units/Rail

NID9N05CLT4G

DPAK

(Pb−Free)

2500/Tape & Reel

Số phần tương tự - NID9N05CL

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
ON Semiconductor	NID9N05CL	69Kb / 8P	Power MOSFET July, 2004 ??Rev. 5
	NID9N05CL	123Kb / 7P	9.0 A, 52 V, N?묬hannel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package December, 2013 ??Rev. 10
	NID9N05CLG	123Kb / 7P	9.0 A, 52 V, N?묬hannel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package December, 2013 ??Rev. 10
VBsemi Electronics Co.,...	NID9N05CLG	1,004Kb / 8P	N-Channel 60 V (D-S) MOSFET
ON Semiconductor	NID9N05CLT4	69Kb / 8P	Power MOSFET July, 2004 ??Rev. 5

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