BUT11AF datasheet(2/8 Pages) PHILIPS

2 / 8 page

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT11AF

STATIC CHARACTERISTICS

hs = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

CES

Collector cut-off current

BE = 0 V; VCE = VCESMmax

1.0

CES

BE = 0 V; VCE = VCESMmax;

2.0

j = 125 ˚C

EBO

Emitter cut-off current

EB = 9 V; IC = 0 A

CEOsust

Collector-emitter sustaining voltage

B = 0 A; IC = 100 mA;

450

L = 25 mH

CEsat

Collector-emitter saturation voltages I

C = 2.5 A; IB = 0.5 A

1.5

BEsat

Base-emitter saturation voltage

C = 2.5 A; IB = 0.5 A

1.3

DC current gain

C = 5 mA; VCE = 5 V

C = 500 mA; VCE = 5 V

DYNAMIC CHARACTERISTICS

hs = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Switching times (resistive load)

Con = 2.5 A; IBon = -IBoff = 0.5 A

Turn-on time

µs

Turn-off storage time

µs

Turn-off fall time

0.8

µs

Switching times (inductive load)

Con = 2.5 A; IBon = 0.5 A; LB = 1 µH;

-V

BB = 5 V

Turn-off storage time

1.1

1.4

µs

Turn-off fall time

150

Switching times (inductive load)

Con = 2.5 A; IBon = 0.5 A; LB = 1 µH;

-V

BB = 5 V; Tj = 100 ˚C

Turn-off storage time

1.2

1.5

µs

Turn-off fall time

140

300

Fig.1. Test circuit for V

CEOsust.

Fig.2. Oscilloscope display for V

CEOsust.

+ 50v

100-200R

Horizontal

Vertical

Oscilloscope

30-60 Hz

300R

VCE / V

min

VCEOsust

IC / mA

100

200

250

1 Measured with half sine-wave voltage (curve tracer).

August 1997

Rev 1.000

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