2SC5435 datasheet(3/38 Pages) RENESAS

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DATA SHEET

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Document No. P15571EJ1V0DS00 (1st edition)

Date Published June 2001 NS CP(K)

Printed in Japan

2001

NPN SILICON RF TWIN TRANSISTOR

µµµµPA841TD

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A 6-PIN LEAD-LESS MINIMOLD

FEATURES

• Low voltage operation

• 2 different built-in transistors (2SC5435, 2SC5600)

Q1: Built-in high-gain transistor

fT = 12.0 GHz TYP.,

S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz

Q2: Built-in low phase distortion transistor suited for OSC operation

fT = 5.0 GHz TYP.,

S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz

• 6-pin lead-less minimold package

BUILT-IN TRANSISTORS

3-pin thin-type ultra super minimold part No.

2SC5435

2SC5600

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

µPA841TD

50 pcs (Non reel)

• 8 mm wide embossed taping

µPA841TD-T3

10 kpcs/reel

• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape

Remark To order evaluation samples, consult your NEC sales representative.

Unit sample quantity is 50 pcs.

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

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