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STM32L151C6U6ADTR bảng dữ liệu(PDF) 82 Page - STMicroelectronics

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Electrical characteristics
STM32L151x6/8/B-A STM32L152x6/8/B-A
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DocID024330 Rev 5
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.
6.3.11
Electrical sensitivity characteristics
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114, ANSI/ESD STM5.3.1 standard.
Table 39. EMI characteristics
Symbol
Parameter
Conditions
Monitored
frequency band
Max vs. frequency range
Unit
4 MHz
voltage
Range 3
16 MHz
voltage
Range 2
32 MHz
voltage
Range 1
SEMI
Peak level
VDD = 3.3 V,
TA = 25 °C,
LQFP100 package
compliant with IEC
61967-2
0.1 to 30 MHz
-16
-7
-3
dBµV
30 to 130 MHz
-12
2
12
130 MHz to 1GHz
-11
0
8
SAE EMI Level
1
1.5
2
-
Table 40. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Packages Class
Maximum
value(1)
Unit
VESD(HBM)
Electrostatic discharge voltage
(human body model)
TA = +25 °C, conforming to
JESD22-A114
All
2
2000
V
VESD(CDM)
Electrostatic discharge voltage
(charge device model)
TA = +25 °C, conforming to
ANSI/ESD STM5.3.1
All
C4
500
V
1. Guaranteed by characterization results.



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