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STM32L151C6U6ADTR bảng dữ liệu(PDF) 80 Page - STMicroelectronics |
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STM32L151C6U6ADTR bảng dữ liệu(HTML) 80 Page - STMicroelectronics |
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80 / 130 page ![]() Electrical characteristics STM32L151x6/8/B-A STM32L152x6/8/B-A 80/130 DocID024330 Rev 5 6.3.9 Memory characteristics The characteristics are given at TA = -40 to 105 °C unless otherwise specified. RAM memory Flash memory and data EEPROM Table 35. RAM and hardware registers Symbol Parameter Conditions Min Typ Max Unit VRM Data retention mode(1) 1. Minimum supply voltage without losing data stored in RAM (in Stop mode or under Reset) or in hardware registers (only in Stop mode). STOP mode (or RESET) 1.65 - - V Table 36. Flash memory and data EEPROM characteristics Symbol Parameter Conditions Min Typ Max(1) 1. Guaranteed by design. Unit VDD Operating voltage Read / Write / Erase -1.65 - 3.6 V tprog Programming / erasing time for byte / word / double word / half- page Erasing - 3.28 3.94 ms Programming - 3.28 3.94 IDD Average current during whole program/erase operation TA = 25 °C, VDD = 3.6 V -300 - µA Maximum current (peak) during program/erase operation -1.5 2.5 mA Table 37. Flash memory, data EEPROM endurance and data retention Symbol Parameter Conditions Value Unit Min(1) 1. Guaranteed by characterization results. Typ Max NCYC(2) Cycling (erase / write) Program memory TA = -40°C to 105 °C 10 -- kcycles Cycling (erase / write) EEPROM data memory 300 - - tRET(2) 2. Characterization is done according to JEDEC JESD22-A117. Data retention (program memory) after 10 kcycles at TA = 85 °C TRET = +85 °C 30 - - years Data retention (EEPROM data memory) after 300 kcycles at TA = 85 °C 30 - - Data retention (program memory) after 10 kcycles at TA = 105 °C TRET = +105 °C 10 - - Data retention (EEPROM data memory) after 300 kcycles at TA = 105 °C 10 - - |
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