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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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S12SCIV3/D bảng dữ liệu(PDF) 91 Page - NXP Semiconductors |
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S12SCIV3/D bảng dữ liệu(HTML) 91 Page - NXP Semiconductors |
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91 / 98 page  MC9S12KG128 SoC Guide — V01.01 Table A-22 Expanded Bus Timing Characteristics Conditions are shown in Table A-4 unless otherwise noted, CLOAD = 50pF Num C Rating Symbol Min Typ Max Unit 1 P Frequency of operation (E-clock) fo 0 25.0 MHz 2 P Cycle time tcyc 40 ns 3 D Pulse width, E low PWEL 19 ns 4D Pulse width, E high1 PWEH 19 ns 5 D Address delay time tAD 8ns 6D Address valid time to E rise (PWEL–tAD)tAV 11 ns 7 D Muxed address hold time tMAH 2ns 8 D Address hold to data valid tAHDS 7ns 9 D Data hold to address tDHA 2ns 10 D Read data setup time tDSR 13 ns 11 D Read data hold time tDHR 0ns 12 D Write data delay time tDDW 7ns 13 D Write data hold time tDHW 2ns 14 D Write data setup time(1) (PWEH–tDDW) tDSW 12 ns 15 D Address access time(1) (tcyc–tAD–tDSR) tACCA 19 ns 16 D E high access time(1) (PWEH–tDSR) tACCE 6ns 17 D Non-multiplexed address delay time tNAD 6ns 18 D Non-muxed address valid to E rise (PWEL–tNAD)tNAV 13 ns 19 D Non-multiplexed address hold time tNAH 2ns 20 D Chip select delay time tCSD 16 ns 21 D Chip select access time(1) (tcyc–tCSD–tDSR) tACCS 11 ns 22 D Chip select hold time tCSH 2ns 23 D Chip select negated time tCSN 8ns 24 D Read/write delay time tRWD 7ns 25 D Read/write valid time to E rise (PWEL–tRWD)tRWV 14 ns 26 D Read/write hold time tRWH 2ns 27 D Low strobe delay time tLSD 7ns 28 D Low strobe valid time to E rise (PWEL–tLSD)tLSV 14 ns 29 D Low strobe hold time tLSH 2ns 30 D NOACC strobe delay time tNOD 7ns 31 D NOACC valid time to E rise (PWEL–tLSD)tNOV 14 ns Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com |
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