1.1

Characteristics (curves)

Figure 1. Maximum power dissipation versus on-state

RMS current (full cycle)

0

10

20

30

40

50

60

0

10

20

30

40

50

180°

P(W)

IT(RMS)(A)

α = 180°

Figure 2. On-state RMS current versus case temperature

(full cycle)

0

10

20

30

40

50

60

0

25

50

75

100

125

150

IT(RMS)(A)

Tc(°C)

Figure 3. On-state RMS current versus ambient

temperature (free air convection)

0

1

2

3

4

0

25

50

75

100

125

150

IT(RMS)(A)

Ta(°C)

α = 180°

Figure 4. On-state characteristics (maximum values)

1

10

100

1000

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

ITM(A)

VTM(V)

Tj max.: 150 °C

Vto = 0.80 V

Rd = 10 mΩ

Tj = 150 °C

Tj = 25 °C

Figure 5. Relative variation of gate triggering current and

voltage versus junction temperature (typical values)

0.0

0.5

1.0

1.5

2.0

2.5

-50

-30

-10

10

30

50

70

90

110

130

150

IGT,VGT[Tj] / IGT,VGT[Tj = 25 °C]

Tj (°C)

IGT Q3

VGT Q1-Q2-Q3

IGT Q1

IGT Q2

Figure 6. Relative variation of holding current and

latching current versus junction temperature (typical

values)

0.0

0.5

1.0

1.5

2.0

-50

-25

0

25

50

75

100

125

150

IH,IL [Tj] / IH,IL [Tj = 25 °C]

Tj (°C)

IH

IL

T5035H-8PI

Characteristics (curves)

DS13818 - Rev 1

page 4/11