Figure 7. Relative variation of static dV/dt immunity

versus junction temperature

0

1

2

3

25

50

75

100

125

150

dV/dt [Tj] / dV/dt [Tj = 150 °C]

Tj(°C)

VD = VR = 536 V

Figure 8. Relative variation of critical rate of decrease of

current (dI/dt)c versus junction temperature

0

1

2

3

4

5

6

7

8

9

10

11

12

13

14

25

50

75

100

125

150

(dl/dt)c [Tj] / (dl/dt)c [Tj = 150 °C]

Tj(°C)

Figure 9. Non repetitive surge peak on-state current for a

sinusoidal pulse with width tp < 10 ms

10

100

1000

10000

0.01

0.10

1.00

10.00

ITSM(A)

t (ms)

p

T initial=25°C

j

ITSM

dI/dt limitation:

100A/µs

Figure 10. Surge peak on-state current versus number of

cycles

0

100

200

300

400

500

600

1

10

100

1000

ITSM(A)

Number of cycles

Repetitive

Tc = 97°C

Non repetitive

Tj initial = 25 °C

t=20ms

One cycle

Figure 11. Relative variation of critical rate of decrease

of main current (dI/dt)c versus reapplied dV/dt (typical

values)

0

1

2

3

4

0.1

1.0

10.0

100.0

(dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c

(dV/dt)c (V/µs)

Figure 12. Relative variation of thermal impedance versus

pulse duration

1.E-02

1.E-01

1.E+00

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

K = [Zth/Rth]

tp(s)

Zth(j-c)

Zth(j-a)

T5035H-8PI

Characteristics (curves)

DS13818 - Rev 1

page 5/11