1

Characteristics

Table 1. Absolute maximum ratings (limiting values)

Symbol

Parameter

Value

Unit

IT(RMS)

RMS on-state current (full sine wave)

Tc = 97 °C

50

A

ITSM

Non repetitive surge peak on-state current (full cycle,

Tj initial = 25 °C)

t = 16.7 ms

525

A

t = 20 ms

500

I2t

I2t value for fusing

tp = 10 ms

1653

A2s

dl/dt

Critical rate of rise of on-state current, IG = 2 x IGT, tr

≤ 100 ns, f = 100 Hz

Tj = 25 °C

100

A/µs

VDRM/VRRM

Repetitive peak off-state voltage

800

V

VDSM/VRSM

Non Repetitive peak off-state voltage

tp = 10 ms, Tj = 25 °C

900

V

IGM

Maximum peak gate current

tp = 20 µs, Tj = 150 °C

4

A

PGM

Maximum gate power dissipation

5

W

PG(AV)

Average gate power dissipation

Tj = 150 °C

1

W

Tstg

Storage temperature range

-40 to +150

°C

Tj

Operating junction temperature range

-40 to +150

°C

TL

Maximum lead temperature for soldering during 10 s

260

°C

VINS

Insulation RMS voltage, 1 minute

2.5

kV

Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol

Test conditions

Quadrants

Value

Unit

IGT

VD = 12 V, RL = 30 Ω

I - II - III

Min.

5

mA

VD = 12 V, RL = 30 Ω

I - II - III

Max.

35

mA

VGT

VD = 12 V, RL = 30 Ω

I - II - III

Max.

1.3

V

VGD

VD = VDRM, RL = 3.3 kΩ

Tj = 150 °C

I - II - III

Min.

0.15

V

IL

IG = 1.2 x IGT

I - III

Max.

75

mA

II

Max.

90

mA

IH (1)

IT = 500 mA, gate open

Max.

60

mA

dV/dt (1)

VD = 536 V, gate open

Tj = 150 °C

Min.

2000

V/µs

(dl/dt)c (1)

Without snubber network

Tj = 150 °C

Min.

40

A/ms

1. For both polarities of A2 referenced to A1.

T5035H-8PI

Characteristics

DS13818 - Rev 1

page 2/11