1.

Product profile

1.1 General description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-

Equipped Transistor (RET) in a SOT96-1 (SO8) small Surface-Mounted Device (SMD)

plastic package.

1.2 Features

I Low VCEsat (BISS) transistor and resistor-equipped transistor in one package

I Low threshold voltage (< 1 V) compared to MOSFET

I Low drive power required

I Space-saving solution

I Reduction of component count

1.3 Applications

I Supply line switches

I Battery charger switches

I High-side switches for LEDs, drivers and backlights

I Portable equipment

1.4 Quick reference data

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02

PBLS2003S

20 V PNP BISS loadswitch

Rev. 02 — 24 August 2009

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

TR1; PNP low VCEsat (BISS) transistor

VCEO

collector-emitter voltage

open base

-

-

−20

V

IC

collector current

-

-

−3A

RCEsat

collector-emitter saturation

resistance

IC = −2A;

IB = −200 mA

[1] -

75

120

m

Ω

TR2; NPN resistor-equipped transistor

VCEO

collector-emitter voltage

open base

-

-

50

V

IO

output current

-

-

100

mA

R1

bias resistor 1 (input)

7

10

13

k

Ω

R2/R1

bias resistor ratio

0.8

1

1.2