PBLS2003S_2

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 02 — 24 August 2009

6 of 16

NXP Semiconductors

PBLS2003S

20 V PNP BISS loadswitch

7.

Characteristics

Ceramic PCB, Al2O3, standard footprint

Fig 4.

TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical

values

006aaa811

tp (s)

10−4

102

103

10

1

10−3

10−1

10−2

102

10

103

Zth(j-a)

(K/W)

1

0.02

0.05

0.1

0.2

0.33

0.5

0.75

1.0

0

0.01

duty cycle =

Table 7.

Characteristics

Tamb =25 °C unless otherwise specified

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

TR1; PNP low VCEsat (BISS) transistor

ICBO

collector-base cut-off

current

VCB = −20 V; IE =0A

-

-

−100

nA

VCB = −20 V; IE =0A;

Tj = 150 °C

--

−50

µA

ICES

collector-emitter

cut-off current

VCE = −20 V; VBE =0V

-

-

−100

nA

IEBO

emitter-base cut-off

current

VEB = −5 V; IC =0A

-

-

−100

nA

hFE

DC current gain

VCE = −2 V; IC = −0.1 A

220

420

-

VCE = −2 V; IC = −0.5 A

[1] 220

360

-

VCE = −2 V; IC = −1A

[1] 200

310

-

VCE = −2 V; IC = −2A

[1] 150

235

-

VCE = −2 V; IC = −3A

[1] 100

180

-

VCEsat

collector-emitter

saturation voltage

IC = −0.5 A; IB = −50 mA

[1] -

−45

−75

mV

IC = −1 A; IB = −50 mA

[1] -

−90

−140

mV

IC = −2 A; IB = −100 mA

[1] -

−160 −255

mV

IC = −2 A; IB = −200 mA

[1] -

−150 −240

mV

IC = −3 A; IB = −300 mA

[1] -

−220 −355

mV

RCEsat

collector-emitter

saturation resistance

IC = −2 A; IB = −100 mA

[1] -

80

130

m

Ω

IC = −2 A; IB = −200 mA

[1] -

75

120

m

Ω