M5M29KB datasheet(15/32 Pages) RENESAS

15 / 32 page

M5M29KB/T331AVP

Renesas LSIs

Rev.1.0_48a_bezz

33,554,432-BIT (4,194,304-WORD BY 8-BIT /2,097,152-WORD BY 16-BIT)

CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

AC electrical characteristics

(Ta=-40 ~85

°C and Flash VCC=3.0V~3.6V, unless otherwise noted)

-Timing measurements are made under AC waveforms for read operations.

Read Only Mode

Min.

Typ.

Max.

tRC

tAVAV

Read Cycle Time

ta(AD)

tAVQV

Address Access Time

ta(CE)

tELQV

Chip Enable Access Time

ta(OE)

tGLQV

Output Enable Access Time

ta(PAD)

Page Read Access Time (after 2nd access)

tCEPH

CE# "H"Pulse width

tCLZ

tELQX

Chip Enable to Output in Low-Z

tDF(CE)

tEHQZ

Chip Enable High to Output in High-Z

tOLZ

tGLQX

Output Enable to Output in Low-Z

tDF(OE)

tGHQZ

Output Enable to High to Output in High-Z

tPHZ

tPLQZ

RP# Low to Output High-Z

150

ta(BYTE)

tFL/HQV

BYTE# access time

tBHZ

tFLQZ

BYTE# low to output high-Z

tOH

Output Hold from CE#, OE# and Address

tBCD

tELFL/H

CE# low to BYTE# high or low

tBAD

tAVFL/H

Address to BYTE# high or low

tOEH

tWHGL

OE# Hold from WE# High

tPS

tPHEL

RP# Recovery to CE# Low

150

Symbol

Parameter

Limits

Units

Flash VCC=3.0-3.6V

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