STM8501 datasheet(4/11 Pages) SAMHOP

tên linh kiện	STM8501

Giải thích chi tiết về linh kiện	Dual E nhancement Mode Field Effect Transistor (N and P Channel)

PDF	11 Pages

Scroll/Zoom	100%

nhà sản xuất	SAMHOP [SamHop Microelectronics Corp.]

Trang chủ	http://www.samhop.com.tw

Logo

4 / 11 page

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

VGS, Gate-to-Source Voltage (V)

VDS, Drain-to-Source Voltage (V)

0.5

1.5

2.5

VGS=3V

-55 C

0.8

1.6

2.4

3.2

4.0

4.8

Parameter

Symbol

Condition

Min Typ Max Unit

ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage

VSD

VGS = 0V, Is =1.7A

N-Ch

0.8

1.2

-0.78

-1.2

VGS = 0V, Is =-1.7A

P-Ch

Notes

c.Guaranteed by design,not subject to production testing.

b.Pulse Test:PulseWidth 300μs,Duty Cycle 2%.

＜

a.Surface Mounted on FR4 Board,t 10sec.

＜

N-Channel

VGS=3.5V

25 C

Tj=125 C

VGS=4.5V

VGS=10V

S T M8501

ID, Drain C urrent (A)

F igure 3. On-R esistance vs. Drain C urrent

and G ate V oltage

V GS =10V

V GS =4.5V

F igure 4. On-R esistance Variation with

Drain C urrent and Temperature

T j( C )

T j, J unction T emperature ( C )

2.0

1.8

1.6

1.4

1.2

1.0

125

100

V GS =10V

ID=4.5A

V GS =4.5V

ID=4A

150

d.Guaranteed when external R g=6 ohm and tf < tf max.

STM8501 bảng dữ liệu(PDF) 4 Page - SamHop Microelectronics Corp.

STM8501 bảng dữ liệu(HTML) 4 Page - SamHop Microelectronics Corp.

Html Pages

1 2 3 4 5 6 7 8 9 10 11

bảng dữ liệu tải về

Link URL