STM8501 datasheet(3/11 Pages) SAMHOP

tên linh kiện	STM8501

Giải thích chi tiết về linh kiện	Dual E nhancement Mode Field Effect Transistor (N and P Channel)

PDF	11 Pages

Scroll/Zoom	100%

nhà sản xuất	SAMHOP [SamHop Microelectronics Corp.]

Trang chủ	http://www.samhop.com.tw

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Parameter

Symbol

Condition

Min Typ Max Unit

OFF CHAR ACTER ISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS 0V, ID -250uA

-55

Zero Gate Voltage Drain Current

IDSS

VDS -44V, VGS 0V

-1

Gate-Body Leakage

IGSS

VGS 20V, VDS 0V

100 nA

ON CHAR ACTER ISTICS b

Gate Threshold Voltage

VGS(th)

VDS VGS, ID = -250uA

-1.0

Drain-Source On-State R esistance

R DS(ON)

VGS -10V, ID -3A

VGS -4.5V, ID -2A

On-State Drain Current

ID(ON)

VDS = -5V, VGS = -10V

Forward Transconductance

VDS -5V, ID -3A

DYNAMIC CHAR ACTER ISTICS

Input Capacitance

CISS

CRSS

COSS

Output Capacitance

R everse Transfer Capacitance

VDS =-30V, VGS = 0V

f =1.0MHZ

SWITCHING CHAR ACTER ISTICS

Turn-On Delay Time

R ise Time

Turn-Off Delay Time

tD(ON)

tD(OFF)

VDD = -30V

R L = 30 ohm

VGS = -10V

R GEN = 6 ohm

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Qgs

Qgd

VDS =-30V, ID = -3 A

VGS =-10V

Fall Time

m ohm

P-Channel ELECTRICAL CHARACTERISTICS (TA 25 C unless otherwise noted)

VDS =-30V, ID =-3A,VGS =-10V

VDS =-30V, ID =-3A,VGS =-4.5V

900

18.5

4.5

1.8

9.1

8.5

ohm

R g

Gate resistance

VGS =0V, VDS = 0V, f=1.0MHZ

4.2

S T M8501

1.7

3.0

100

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