AP63300/AP63301

Document number: DS42002 Rev. 3 - 2

5 of 22

www.diodes.com

August 2019

© Diodes Incorporated

AP63300/AP63301

Absolute Maximum Ratings (Note 4) (At TA = +25°C, unless otherwise specified.)

Symbol

Parameter

Rating

Unit

VIN

Supply Pin Voltage

-0.3 to +35.0 (DC)

V

-0.3 to +40.0 (400ms)

VFB

Feedback Pin Voltage

-0.3V to +6.0

V

VEN

Enable/UVLO Pin Voltage

-0.3 to +35.0

V

VSW

Switch Pin Voltage

-0.3 to VIN + 0.3 (DC)

V

-2.5 to VIN + 2.0 (20ns)

VBST

Bootstrap Pin Voltage

VSW - 0.3 to VSW + 6.0

V

TST

Storage Temperature

-65 to +150

°C

TJ

Junction Temperature

+160

°C

TL

Lead Temperature

+260

°C

ESD Susceptibility (Note 5)

HBM

Human Body Model

2000

V

CDM

Charged Device Model

1000

V

Notes:

4. Stresses greater than the Absolute Maximum Ratings specified above may cause permanent damage to the device. These are stress ratings only;

functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may

be affected by exposure to absolute maximum rating conditions for extended periods of time.

5. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when

handling and transporting these devices.

Thermal Resistance (Note 6)

Symbol

Parameter

Rating

Unit

θJA

Junction to Ambient

TSOT26

89

°C/W

θJC

Junction to Case

TSOT26

39

°C/W

Note:

6. Test condition for TSOT26: Device mounted on FR-4 substrate, single-layer PC board, 2oz copper, with minimum recommended pad layout.

Recommended Operating Conditions (Note 7) (At TA = +25°C, unless otherwise specified.)

Symbol

Parameter

Min

Max

Unit

VIN

Supply Voltage

3.8

32

V

VOUT

Output Voltage

0.8

31

V

TA

Operating Ambient Temperature Range

-40

+85

°C

TJ

Operating Junction Temperature Range

-40

+125

°C

Note:

7. The device function is not guaranteed outside of the recommended operating conditions.