AM6421 datasheet(100/260 Pages) TI

100 / 260 page

overshoot

undershoot

period

Overshoot = 20% of nominal

IO supply voltage

Undershoot = 20% of nominal

IO supply voltage

Tovershoot + Tundershoot < 20% of Tperiod

Figure 7-1. IO Transient Voltage Ranges

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

(ESD)

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±1000

Charged-device model (CDM), per ANSI/ESDA/JEDEC JS-002(2)

±250

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Power-On Hours (POH)

EXTENDED JUNCTION TEMPERATURE RANGE(1) (2) (3)

JUNCTION TEMP (TJ)

LIFETIME (POH)

-40°C to 105°C

100000

(1)

This information is provided solely for your convenience and does not extend or modify the warranty provided under TI's standard

terms and conditions for TI semiconductor products.

(2)

Unless specified in the table above, all voltage domains and operating conditions are supported in the device at the noted

temperatures.

(3)

POH is a function of voltage, temperature and time. Usage at higher voltages and temperatures will result in a reduction in POH.

AM6442, AM6441, AM6422, AM6421, AM6412, AM6411

SPRSP56E – JANUARY 2021 – REVISED SEPTEMBER 2022

www.ti.com

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