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RHFLVDSR2D2 bảng dữ liệu(PDF) 5 Page - STMicroelectronics

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RHFLVDSR2D2 bảng dữ liệu(HTML) 5 Page - STMicroelectronics

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RHFLVDSR2D2
Radiation
17
3
Radiation
Total dose (MIL-STD-883 TM 1019)
The products guaranteed in radiation within the RHA QML-V system fully comply with the
MIL-STD-883 TM 1019 specification.
The RHFLVDSR2D2 is RHA QML-V, tested and characterized in full compliance with the
MIL-STD-883 specification, between 50 and 300 rad/s only (full CMOS technology).
All parameters provided in Table 7: Electrical characteristics apply to both pre- and post-
irradiation, as follows:
All test are performed in accordance with MIL-PRF-38535 and test method 1019 of
MIL-STD-883 for total ionizing dose (TID).
The initial characterization is performed in qualification only on both biased and
unbiased parts.
Each wafer lot is tested at high dose rate only, in the worst bias case condition, based
on the results obtained during the initial qualification.
Heavy ions
The behavior of the product when submitted to heavy ions is not tested in production.
Heavy-ion trials are performed on qualification lots only.
Table 6. Radiations
Type
Characteristics
Value
Unit
TID
High-dose rate (50 - 300 rad/sec)
300
krad
Heavy ions
SEL immunity up to:
(with a particle angle of 60 °, at 125 °C)
135
MeV.cm²/mg
SEL immunity up to:
(with a particle angle of 0 °, at 125 °C)
67
SET/SEU immunity up to:
(at 25 °C)
32



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