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AS4LC2M8S0 bảng dữ liệu(PDF) 14 Page - Alliance Semiconductor Corporation

tên linh kiện AS4LC2M8S0
Giải thích chi tiết về linh kiện  3.3V 2M 횞 8/1M 횞 16 CMOS synchronous DRAM
PDF  29 Pages
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nhà sản xuất  ALSC [Alliance Semiconductor Corporation]
Trang chủ  https://www.alliancememory.com
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AS4LC2M8S0 bảng dữ liệu(HTML) 14 Page - Alliance Semiconductor Corporation

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®
5/21/01; v.1.1
Alliance Semiconductor
P. 14 of 29
AS4LC2M8S1
AS4LC1M16S1
Write—full-page burst
* A8 and A9 = Don’t care.
† DQM represents DQML and DQMH. DQML controls the lower byte, and DQMH controls the upper byte.
ƒPage left open; no t
RP .
Read—full-page burst*
* For this example, the CAS latency = 2.
† A8 and A9 = “Don’t care.”
ƒ DQM represents DQML and DQMH. DQML controls the lower byte, and DQMH controls the upper byte.
** Page left open; no t
RP.
A0–A9
A10
BA
tAH
tAS
ROW
tAH
tAS
ROW
tAH
tAS
BANK
(A0-A7)
*
BANK
CLK
CKE
COMMAND
DQM†
T0
T1
T4
T2
Tn+1
tCH
tCK
*†ƒ
tCKS tCKH
tCMH
tCMS
NOP
NOP
NOP
T3
T5
DQ
tCL
tCMS
tCMH
ACTIVE
Column m
tRCD
Tn+2
DIN m
DIN m+1
DIN m+3
tDS
tDH
tDS
tDS
Tn+3
WRITE
NOP
NOP
BURST TERM
NOP
DIN m+2
tDS tDH
tDS tDH
tDH
tDS
DIN m+255
tDH
tDH
Full page completed
Full-page burst does not
self terminate. Can use
BURST TERMINATE command.
ƒ
256 locations within same row
CLK
T0
T1
T2
T3
T4
T5
T6
Tn+1
Tn+2
Tn+3
Tn+4
tCL
tCH
tCK
CKE
tCMS tCMH
Command
ACTIVE
NOP
NOP
BURST
TERM
NOP
NOP
NOP
NOP
NOP
READ
NOP
DQM†
tCMS tCMH
A0–A9
A10
tAH
tAS
tAH
tAS
ROW
COLUMN m
(A0-A7)†
ROW
BA
tAH
tAS
BANK
BANK
DQ
tRCD
DOUT m
Full page completed
tAC
*†ƒ
tLZ
tOH
tAC
*†ƒ
DOUT m+1
tOH
tAC
*†ƒ
tOH
tAC
*†ƒ
DOUT m+2
DOUT m+255
tOH
tAC
*†ƒ
DOUT m
tOH
tAC
*†ƒ
DOUT m+1
tOH
CAS Latency
256 locations within same row
tHZ
*†ƒ
Full-page burst does not self-terminate.
Can use BURST TERMINATE command.
**



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