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ADN8834ACPZ-R2 bảng dữ liệu(PDF) 3 Page - Analog Devices

tên linh kiện ADN8834ACPZ-R2
Giải thích chi tiết về linh kiện  Ultracompact, 1.5 A Thermoelectric Cooler (TEC) Controller
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nhà sản xuất  AD [Analog Devices]
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ADN8834ACPZ-R2 bảng dữ liệu(HTML) 3 Page - Analog Devices

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Data Sheet
ADN8834
Rev. B | Page 3 of 27
SPECIFICATIONS
VIN = 2.7 V to 5.5 V, TJ = −40°C to +125°C for minimum/maximum specifications, and TA = 25°C for typical specifications, unless
otherwise noted.
Table 2.
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
POWER SUPPLY
Driver Supply Voltage
V
PVIN
2.7
5.5
V
Controller Supply Voltage
V
VDD
2.7
5.5
V
Supply Current
I
VDD
PWM not switching
3.3
5
mA
Shutdown Current
I
SD
EN/SY = AGND or VLIM/SD = AGND
350
700
µA
Undervoltage Lockout (UVLO)
V
UVLO
V
VDD rising
2.45
2.55
2.65
V
UVLO Hysteresis
UVLO
HYST
80
90
100
mV
REFERENCE VOLTAGE
V
VREF
I
VREF = 0 mA to 10 mA
2.475
2.50
2.525
V
LINEAR OUTPUT
Output Voltage
V
LDR
I
LDR = 0 A
Low
0
V
High
V
PVIN
V
Maximum Source Current
I
LDR_SOURCE
T
J = −40°C to +105°C
1.5
A
T
J = −40°C to +125°C
1.2
A
Maximum Sink Current
I
LDR_SINK
T
J = −40°C to +105°C
1.5
A
T
J = −40°C to +125°C
1.2
A
On Resistance
I
LDR = 0.6 A
P-MOSFET
R
DS_PL(ON)
WLCSP, V
PVIN = 5.0 V
35
50
mΩ
WLCSP, V
PVIN = 3.3 V
44
60
mΩ
LFCSP, V
PVIN = 5.0 V
50
65
mΩ
LFCSP, V
PVIN = 3.3 V
55
75
mΩ
N-MOSFET
R
DS_NL(ON)
WLCSP, V
PVIN = 5.0 V
31
50
mΩ
WLCSP, V
PVIN = 3.3 V
40
55
mΩ
LFCSP, V
PVIN = 5.0 V
45
70
mΩ
LFCSP, V
PVIN = 3.3 V
50
80
mΩ
Leakage Current
P-MOSFET
I
LDR_P_LKG
0.1
10
µA
N-MOSFET
I
LDR_N_LKG
0.1
10
µA
Linear Amplifier Gain
A
LDR
40
V/V
LDR Short-Circuit Threshold
I
LDR_SH_GNDL
LDR short to PGNDL, enter hiccup
2.2
A
I
LDR_SH_PVIN(L)
LDR short to PVIN, enter hiccup
−2.2
A
Hiccup Cycle
T
HICCUP
15
ms
PWM OUTPUT
Output Voltage
V
SFB
I
SFB = 0 A
V
Low
0.06 × V
PVIN
V
High
0.93 × V
PVIN
V
Maximum Source Current
I
SW_SOURCE
T
J = −40°C to +105°C
1.5
A
T
J = −40°C to +125°C
1.2
A
Maximum Sink Current
I
SW_SINK
T
J = −40°C to +105°C
1.5
A
T
J = −40°C to +125°C
1.2
A
On Resistance
I
SW = 0.6 A
P-MOSFET
R
DS_PS(ON)
WLCSP, V
PVIN = 5.0 V
47
65
mΩ
WLCSP, V
PVIN = 3.3 V
60
80
mΩ
LFCSP, V
PVIN = 5.0 V
60
80
mΩ
LFCSP, V
PVIN = 3.3 V
70
95
mΩ



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