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STM32WB50CG bảng dữ liệu(PDF) 75 Page - STMicroelectronics

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STM32WB50CG bảng dữ liệu(HTML) 75 Page - STMicroelectronics

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DS13047 Rev 5
75/119
STM32WB50CG STM32WB30CE
Electrical characteristics
110
6.3.9
Wakeup time from Low-power modes and voltage scaling
transition times
The wakeup times given in Table 45 are the latency between the event and the execution of
the first user instruction.
The device goes in Low-power mode after the WFE (Wait For Event) instruction.
APB1
RTC
1.10
1.25
µA/MHz
I2C1 independent clock domain
2.50
4.40
I2C1 clock domain
4.80
5.50
LPTIM1 independent clock domain
2.10
3.00
LPTIM1 clock domain
3.60
3.80
TIM2
5.65
4.90
LPTIM2 clock domain
3.95
4.50
LPTIM2 independent clock domain
2.20
3.80
WWDG
0.335
0.965
All APB1 peripherals
17.0
13.55
APB2
AHB to APB2(3)
1.10
1.35
TIM1
8.20
7.25
TIM17
2.85
2.40
TIM16
2.75
2.55
USART1 independent clock domain
4.40
7.00
USART1 clock domain
8.80
7.75
SPI1
1.75
1.45
All APB2 on
25.5
22
ALL
72.2
62.9
1. The BusMatrix is automatically active when at least one master is ON (CPU, DMA).
2. GPIOs consumption during read and write accesses.
3. The AHB to APB2 bridge is automatically active when at least one peripheral is ON on the APB2.
Table 44. Peripheral current consumption (continued)
Peripheral
Run
Low-power
run and sleep
Unit
Table 45. Low-power mode wakeup timings(1)
Symbol
Parameter
Conditions
Typ
Max
Unit
tWUSLEEP
Wakeup time from
Sleep mode
to Run mode
-9
10
No. of
CPU
cycles
tWULPSLEEP
Wakeup time from
Low-power sleep mode
to Low-power run mode
Wakeup in Flash with memory in power-down
during low-power sleep mode (FPDS = 1 in
PWR_CR1) and with clock MSI = 2 MHz
910



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