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STM8AF6213 bảng dữ liệu(PDF) 69 Page - STMicroelectronics

tên linh kiện STM8AF6213
Giải thích chi tiết về linh kiện  Automotive 8-bit MCU, with up to 8-Kbyte Flash memory, data EEPROM, 10-bit ADC, timers, LIN, SPI, I²C, 3 to 5.5 V
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STM8AF6213 bảng dữ liệu(HTML) 69 Page - STMicroelectronics

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DS9884 Rev 9
69/112
STM8AF6213/13A/23/23A/26
Electrical characteristics
108
HSE oscillator critical gm formula
The crystal characteristics have to be checked with the following formula:
gm gmcrit
»
where gmcrit can be calculated with the crystal parameters as follows:
gmcrit
2
Π
×
HSE
f
×
()
2
Rm
×
2Co C
+
()
2
=
Rm: Notional resistance (see crystal specification)
Lm: Notional inductance (see crystal specification)
Cm: Notional capacitance (see crystal specification)
Co: Shunt capacitance (see crystal specification)
CL1 = CL2 = C: Grounded external capacitance
10.3.4
Internal clock sources and timing characteristics
Subject to general operating conditions for VDD and TA.
High speed internal RC oscillator (HSI)
Table 42. HSI oscillator characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
-
-
16
-
MHz
ACCHS
HSI oscillator user trimming
accuracy
Trimmed by the
application for any VDD
and TA conditions
3-bit
calibration
-1(1)
-1(1)
%
4-bit
calibration
-0.5(1)
-0.5(1)
HSI oscillator accuracy
(factory calibrated)
3.0 V
≤ VDD ≤ 5.5 V,
-40 °C
≤ TA ≤ 150 °C
-5
-
5
3.0 V
≤ VDD ≤ 5.5 V,
-40 °C
≤ TA ≤ 125 °C
-3(2)
-3(2)
tsu(HSI) HSI oscillator wakeup time
-
-
-
2(3)
µs
IDD(HSI)
HSI oscillator power
consumption
-
-
170
250(3)
µA
1. Selection between legacy 3-bit calibration and 4-bit extended calibration is done using the HSITRIM bit in OPT3 and
NOPT3.To achieve a higher accuracy, 4-bit calibration must be enabled.
2. These values are guaranteed for STM8AF62xxIxx order codes only.
3. Guaranteed by characterization results.



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