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STM32WB35CC bảng dữ liệu(PDF) 152 Page - STMicroelectronics

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STM32WB35CC bảng dữ liệu(HTML) 152 Page - STMicroelectronics

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Electrical characteristics
STM32WB55xx STM32WB35xx
152/193
DS11929 Rev 11
Figure 30. Typical connection diagram using the ADC
1. Refer to Table 77: ADC characteristics for the values of RAIN, RADC and CADC.
2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
pad capacitance (refer to Table 72: I/O static characteristics for the value of the pad capacitance). A high
Cparasitic value will downgrade conversion accuracy. To remedy this, fADC should be reduced.
3. Refer to Table 72: I/O static characteristics for the values of Ilkg.
General PCB design guidelines
Power supply decoupling has to be performed as shown in Figure 16: Power supply scheme
(all packages except UFBGA129 and WLCSP100). The 10 nF capacitor needs to be
ceramic (good quality), placed as close as possible to the chip.
6.3.21
Voltage reference buffer characteristics
MS33900V5
Sample and hold ADC converter
12-bit
converter
Cparasitic
(2)
Ilkg
(3)
VT
CADC
VDDA
RAIN
(1)
VAIN
VT
AINx
RADC
Table 83. VREFBUF characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDDA
Analog supply
voltage
Normal mode
VRS = 0
2.4
-
3.6
V
VRS = 1
2.8
-
3.6
Degraded mode(2)
VRS = 0
1.65
-
2.4
VRS = 1
1.65
-
2.8
VREFBUF_
OUT
Voltage
reference output
Normal mode
VRS = 0
2.046
2.048
2.049
VRS = 1
2.498
2.5
2.502
Degraded mode(2)
VRS = 0
VDDA-150 mV
-
VDDA
VRS = 1
VDDA-150 mV
-
VDDA
TRIM
Trim step
resolution
-
-
-
±0.05
±0.1
%
CL
Load capacitor
-
-
0.5
1
1.5
µF
esr
Equivalent
series resistor
of Cload
--
-
-
2
Ω
Iload
Static load
current
--
-
-
4
mA



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