công cụ tìm kiếm bảng dữ liệu linh kiện điện tử
  Vietnamese  ▼
ALLDATASHEET.VN

X  

Preview PDF HTML

STM32L072X8 bảng dữ liệu(PDF) 91 Page - STMicroelectronics

tên linh kiện STM32L072X8
Giải thích chi tiết về linh kiện  Ultra-low-power 32-bit MCU Arm®-based Cortex®-M0, up to 192KB Flash, 20KB SRAM, 6KB EEPROM, USB, ADC, DACs
PDF  160 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
Trang chủ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32L072X8 bảng dữ liệu(HTML) 91 Page - STMicroelectronics

Back Button STM32L072X8 Datasheet HTML 87Page - STMicroelectronics STM32L072X8 Datasheet HTML 88Page - STMicroelectronics STM32L072X8 Datasheet HTML 89Page - STMicroelectronics STM32L072X8 Datasheet HTML 90Page - STMicroelectronics STM32L072X8 Datasheet HTML 91Page - STMicroelectronics STM32L072X8 Datasheet HTML 92Page - STMicroelectronics STM32L072X8 Datasheet HTML 93Page - STMicroelectronics STM32L072X8 Datasheet HTML 94Page - STMicroelectronics STM32L072X8 Datasheet HTML 95Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 91 / 160 page
background image
DS10689 Rev 5
91/160
STM32L072xx
Electrical characteristics
122
6.3.9
Memory characteristics
RAM memory
Flash memory and data EEPROM
Table 52. RAM and hardware registers
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRM
Data retention mode(1)
1. Minimum supply voltage without losing data stored in RAM (in Stop mode or under Reset) or in hardware
registers (only in Stop mode).
STOP mode (or RESET)
1.65
-
-
V
Table 53. Flash memory and data EEPROM characteristics
Symbol
Parameter
Conditions
Min
Typ
Max(1)
1. Guaranteed by design.
Unit
VDD
Operating voltage
Read / Write / Erase
-1.65
-
3.6
V
tprog
Programming time for
word or half-page
Erasing
-
3.28
3.94
ms
Programming
-
3.28
3.94
IDD
Average current during
the whole programming /
erase operation
TA = 25 °C, VDD = 3.6 V
-
500
700
µA
Maximum current (peak)
during the whole
programming / erase
operation
-1.5
2.5
mA
Table 54. Flash memory and data EEPROM endurance and retention
Symbol
Parameter
Conditions
Value
Unit
Min(1)
NCYC(2)
Cycling (erase / write)
Program memory
TA = -40°C to 105 °C
10
kcycles
Cycling (erase / write)
EEPROM data memory
100
Cycling (erase / write)
Program memory
TA = -40°C to 125 °C
0.2
Cycling (erase / write)
EEPROM data memory
2



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100  ...More


bảng dữ liệu tải về

Go To PDF Page


Link URL



Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không?  [ DONATE ] 

Alldatasheet là   |   Quảng cáo   |   Liên lạc với chúng tôi   |   Chính sách bảo mật   |   Liên kết đến bảng dữ liệu    |   Trao đổi link   |   Tìm kiếm theo nhà sản xuất
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com