AOF800L datasheet(2/7 Pages) AOSMD

2 / 7 page

AO4F800

Symbol

Min

Typ

Max

Units

BVDSS

TJ=55°C

IGSS

100

VGS(th)

1.8

ID(ON)

TJ=125°C

Ω

gFS

VSD

0.76

Ciss

1040 1250

Coss

190

Crss

120

0.7

0.85

Ω

Qg(10V)

19.8

9.8

Qgs

2.5

Qgd

3.5

tD(on)

5.2

6.25

tD(off)

20.5

3.6

4.3

trr

Body Diode Reverse Recovery time

IF=8.3A, dI/dt=100A/µs

Qrr

Body Diode Reverse Recovery charge IF=8.3A, dI/dt=100A/µs

810

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY

ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIG

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)

Parameter

Conditions

STATIC PARAMETERS

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

IDSS

Zero Gate Voltage Drain Current

VDS=24V, VGS=0V

µA

Gate-Body leakage current

VDS=0V, VGS= ±20V

Gate Threshold Voltage

VDS=VGS ID=250µA

On state drain current

VGS=4.5V, VDS=5V

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V, ID=8.3A

Ω

VGS=4.5V, ID=6.7A

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

Input Capacitance

VGS=0V, VDS=15V, f=1MHz

Output Capacitance

Forward Transconductance

VDS=5V, ID=8.3A

Diode Forward Voltage

IS=1A

Turn-Off Fall Time

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

VGS=10V, VDS=15V, RL=1.8Ω,

RGEN=3Ω

Gate resistance

VGS=0V, VDS=0V, f=1MHz

VGS=10V, VDS=15V, ID=8.3A

Total Gate Charge

Turn-On Rise Time

Turn-Off DelayTime

A: The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance

rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The

SOA curve provides a single pulse rating.

Rev2: August 2005

Alpha & Omega Semiconductor, Ltd.

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