AOF800L datasheet(1/7 Pages) AOSMD

tên linh kiện	AOF800L

Giải thích chi tiết về linh kiện	Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

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Symbol

Units

VDS

V

VGS

V

IDM

TJ, TSTG

°C

Symbol

Units

RθJL

Symbol

Units

RθJL

Parameter: Thermal Characteristics MOSFET Q1

Typ

Max

Maximum Junction-to-Ambient

A

t ≤ 10s

RθJA

47

62.5

Maximum Junction-to-Ambient

A

Steady-State

°C/W

83

110

Maximum Junction-to-Lead

C

Steady-State

23

40

Parameter: Thermal Characteristics MOSFET Q2

Typ

Max

Maximum Junction-to-Ambient

A

t ≤ 10s

RθJA

31

40

Maximum Junction-to-Ambient

A

Steady-State

°C/W

59

75

Maximum Junction-to-Lead

C

Steady-State

16

24

Max Q1

30

±20

8.3

A

13

30

80

17.7

6.7

TA=25°C

TA=70°C

Power Dissipation

PD

Pulsed Drain Current

B

Continuous Drain

Current

A

ID

W

-55 to 150

Junction and Storage Temperature Range

3

1.28

2.1

TA=25°C

TA=70°C

2

Gate-Source Voltage

±20

30

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Drain-Source Voltage

Max Q2

AO4F800

Asymmetric Dual N-Channel Enhancement Mode Field Effect

Transistor

Features

Q1

Q2

VDS (V) = 30V

VDS(V) = 30V

ID = 8.3A (VGS = 10V)

ID=17.7A

RDS(ON) < 18mΩ

< 6.5m

Ω

(VGS = 10V)

RDS(ON) < 27mΩ

< 8.5m

Ω

(VGS = 4.5V)

General Description

The AO4F800 uses advanced trench technology to

provide excellent RDS(ON) and low gate charge. The

two MOSFETs make a compact and efficient switch

and synchronous rectifier combination for use in DC-

DC converters. Standard Product AOF800 is Pb-free

(meets ROHS & Sony 259 specifications). AOF800L

is a Green Product ordering option. AOF800 and

AOF800L are electrically identical.

SOIC-14

G2

G1

D1

1

2

3

4

5

6

7

14

13

12

11

10

9

8

S2

D2/S1

S1

D2/S1

G1

D1

S1

G2

D2

S2

Q1

Q2

Alpha & Omega Semiconductor, Ltd.

Số phần tương tự - AOF800L

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Số phần tương tự - AOF800L

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