AOF800L datasheet(7/7 Pages) AOSMD

tên linh kiện	AOF800L

Giải thích chi tiết về linh kiện	Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

PDF	7 Pages

Scroll/Zoom	100%

nhà sản xuất	AOSMD [Alpha & Omega Semiconductors]

Trang chủ	http://www.aosmd.com

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AO4F800

Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)

100

120

Qg (nC)

Figure 7: Gate-Charge Characteristics

2000

4000

6000

8000

VDS (Volts)

Figure 8: Capacitance Characteristics

Ciss

100

0.001

0.01

0.1

100

1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note E)

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

100

1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

Coss

Crss

0.1

1.0

10.0

100.0

0.1

100

VDS (Volts)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

100

µs

10ms

1ms

0.1s

10s

RDS(ON)

limited

TJ(Max)=150°C

TA=25°C

VDS=15V

ID=17.7A

Single Pulse

D=Ton/T

TJ,PK=TA+PDM.ZθJA.RθJA

RθJA=40°C/W

Ton

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

TJ(Max)=150°C

TA=25°C

µs

Alpha & Omega Semiconductor, Ltd.

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