PR812BA33 datasheet(1/6 Pages) NIKOSEM

tên linh kiện	PR812BA33

Giải thích chi tiết về linh kiện	N-Channel Enhancement Mode Field Effect Transistor

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REV 1.0

1

K-12-1

N-Channel Enhancement Mode

Field Effect Transistor

PR812BA33

PowerFET

NIKO-SEM

G

D

S

Features

• Halogen Free and RoHS compliant.

• Low R

DS(on) to Minimize Conduction Losses.

• Ohmic Region Good R

DS(on) Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

• 100% UIS Tested & 100% Rg Tested

• Patent No. US9,947,551.

Applications

• Protection Circuits Applications.

• Computer for DC to DC Converters Applications.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

4

TC = 25 °C

ID

161

A

TC = 100 °C

102

TA = 25 °C

40

TA = 70 °C

32

Pulsed Drain Current

1

IDM

306

Avalanche Current

IAS

28

Avalanche Energy

L = 0.5mH

EAS

196

mJ

Power Dissipation

3

TC = 25 °C

PD

50

W

TC = 100 °C

20

TA = 25 °C

3.1

TA = 70 °C

2

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

G: 1

D: 6

S: 2,3,4,5

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

4

30V

1.2mΩ

161A

Top view

Side view

Bottom view

Số phần tương tự - PR812BA33

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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	PR811-C622	1,016Kb / 4P	1st/2nd Gen Intel® Xeon® Scalable Processor Family ATX

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PR812BA33 bảng dữ liệu(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

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