D472 datasheet(1/5 Pages) AOSMD

tên linh kiện	D472

Giải thích chi tiết về linh kiện	N-Channel Enhancement Mode Field Effect Transistor

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1.4

193

18

Symbol

VDS

VGS

IDM

IAR

EAR

TJ, TSTG

Symbol

Typ

Max

15

20

41

50

RθJC

2.1

3

TA=70°C

2.1

Power Dissipation

A

TA=25°C

PDSM

3

135

A

mJ

W

Junction and Storage Temperature Range

A

PD

°C

50

25

-55 to 175

TC=100°C

Avalanche Current

C

30

ID

50

150

Pulsed Drain Current

C

Power Dissipation

B

TC=25°C

Continuous Drain

Current

G

TC=25°C

TC=100°C

Repetitive avalanche energy L=0.3mH

C

Absolute Maximum Ratings TA=25°C unless otherwise noted

V

±20

Gate-Source Voltage

Drain-Source Voltage

25

Maximum

Units

Parameter

t ≤ 10s

RθJA

°C/W

Maximum Junction-to-Ambient

A

Steady-State

°C/W

W

Maximum Junction-to-Case

B

Steady-State

°C/W

Thermal Characteristics

Parameter

Units

Maximum Junction-to-Ambient

A

AOD472

N-Channel Enhancement Mode Field Effect Transistor

Features

VDS (V) = 25V

ID = 50A (VGS = 10V)

RDS(ON) <6 mΩ (VGS = 10V)

RDS(ON) <9.5 mΩ (VGS = 4.5V)

General Description

The AOD472 uses advanced trench technology and

design to provide excellent RDS(ON) with low gate

charge. This device is suitable for use in PWM, load

switching and general purpose applications. Standard

product AOD472 is Pb-free (meets ROHS & Sony

259 specifications). AOD472L is a Green Product

ordering option. AOD472 and AOD472L are

electrically identical.

G

D

S

G

D

S

TO-252

D-PAK

Top View

Drain Connected to

Tab

Alpha & Omega Semiconductor, Ltd.

Số phần tương tự - D472

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