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MMPF0100 bảng dữ liệu(PDF) 57 Page - NXP Semiconductors |
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MMPF0100 bảng dữ liệu(HTML) 57 Page - NXP Semiconductors |
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57 / 136 page ![]() NXP Semiconductors 57 PF0100 FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS Switch mode supply SW2 (continued) ηSW2 Efficiency •VIN = 3.6 V, fSW2 = 2.0 MHz, LSW2 = 1.0 μH • PFM, 3.15 V, 1.0 mA • PFM, 3.15 V, 50 mA • APS, PWM, 3.15 V, 400 mA • APS, PWM, 3.15 V, 600 mA • APS, PWM, 3.15 V, 1000 mA • APS, PWM, 3.15 V, 2000 mA – – – – – – 94 95 96 94 92 86 – – – – – – % ΔVSW2 Output ripple – 10 – mV VSW2LIR Line regulation (APS, PWM) – – 20 mV VSW2LOR DC load regulation (APS, PWM) – – 20 mV VSW2LOTR Transient load regulation • Transient load = 0.0 mA to 1.0 A, di/dt = 100 mA/ μs • Overshoot • Undershoot – – – – 50 50 mV ISW2Q Quiescent current • PFM mode • APS mode (low output voltage settings) • APS mode (high output voltage settings) – – – 23 145 305 – – – µA RONSW2P SW2 P-MOSFET RDS(on) • at VIN = VINSW2 = 3.3 V – 190 209 m Ω RONSW2N SW2 N-MOSFET RDS(on) • at VIN = VINSW2 = 3.3 V – 212 255 m Ω ISW2PQ SW2 P-MOSFET leakage current • VIN = VINSW2 = 4.5 V –– 12 µA ISW2NQ SW2 N-MOSFET leakage current • VIN = VINSW2 = 4.5 V –– 4.0 µA RSW2DIS Discharge resistance – 600 – Ω Notes 50. When output is set to > 2.6 V the output follows the input down when VIN gets near 2.8 V. 51. The higher output voltages available depend on the voltage drop in the conduction path as given by the following equation: (VINSW2 - VSW2) = ISW2* (DCR of Inductor +RONSW2P + PCB trace resistance). 52. Applies to NP, F9, and FA Industrial versions only (ANES suffix) Table 63. SW2 electrical characteristics (continued) All parameters are specified at TMIN to TMAX (See Table 3), VIN = VINSW2 = 3.6 V, VSW2 = 3.15 V, ISW2 = 100 mA, SW2_PWRSTG[2:0] = [111], typical external component values, fSW2 = 2.0 MHz, unless otherwise noted. Typical values are characterized at VIN = VINSW2 = 3.6 V, VSW2 = 3.15 V, ISW2 = 100 mA, SW2_PWRSTG[2:0] = [111], and 25 °C, unless otherwise noted. Symbol Parameter Min Typ Max Unit Notes |
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