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FSL518APG bảng dữ liệu(PDF) 4 Page - ON Semiconductor |
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FSL518APG bảng dữ liệu(HTML) 4 Page - ON Semiconductor |
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4 / 27 page ![]() FSL518H, FSL538H, FSL518A, FSL538A www.onsemi.com 4 MAXIMUM RATINGS Rating Symbol Value Unit DRAIN Pin Voltage VDS −0.3 to 800 V VCC Pin Voltage VCC −0.3 to 26 V Feedback Pin Voltage VFB −0.3 to 5.0 V Compensation Pin Voltage VCOMP −0.3 to 5.0 V Line-detection Pin Voltage VLINE −0.3 to VCC V DRAIN Pin Pulsed Current (Note 3) FSL518H/A FSL538H/A ID-PULSE 2.1 2.8 A Single Pulse Avalanche Energy (Note 4) FSL518H/A FSL538H/A EAS 6.0 11.7 mJ Total Power Dissipation (PDIP−7) FSL518H/A & FSL538H/A PD 1.25 W Junction Temperature (Note 5) TJ 150 °C Operating Junction Temperature (Note 6) TJ −40 to +125 °C Storage Temperature TSTG −55 to +150 °C ESD Capability HBM, JESD22−A114 ESD Capability HBM, JESD22−A114 (Except DRAIN pin) 1000 2000 V ESD Capability CDM, JESD22−C101 1000 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 3. Repetitive peak switching current when the inductive load is assumed: Limited by maximum duty and junction temperature. 4. L= 45 mH, starting TJ = 25°C. 5. Although this parameter guarantees IC operation, it does not guarantee all electrical characteristics 6. Junction temperature can limit maximum output power of power converter controlled by the device. THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Characteristics, PDIP−7 Thermal Resistance, Junction-to-Air (Note 7) FSL518H/A & FSL538H/A Thermal Reference, Junction-to-Lead (Note 7) FSL518H/A & FSL538H/A RqJA RyJL 100 18 °C/W 7. JEDEC recommended environment, JESD51−2, and test board, JESD51−3, with minimum land pattern. ELECTRICAL CHARACTERISTICS TJ = −40 to +125°C and VCC = 14 V unless otherwise specified. Parameter Test Conditions Symbol Min Typ Max Unit SENSEFET Section MOSFET Peak Current Limit TJ = 25°C, Duty = 60% di/dt = 100 mA/ms FSL518H di/dt = 100 mA/ms FSL518A di/dt = 143 mA/ms FSL538H di/dt = 143 mA/ms FSL538A ILIM 428 560 614 790 460 610 660 860 492 660 706 930 mA Drain-to-Source On-State Resistance MOSFET ON, TJ = 25°C FSL518H/A, IDRAIN = 0.46 A FSL538H/A, IDRAIN = 0.66 A RDS(ON) 6.3 3.8 8.0 4.6 Ω Output Capacitance (Note 9) VDS = 480 V, VGS = 0 V, f = 1 MHz, TJ = 25°C FSL518H/A FSL538H/A COSS 3.8 5.0 pF |
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