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MC56F81663 bảng dữ liệu(PDF) 54 Page - NXP Semiconductors

tên linh kiện MC56F81663
Giải thích chi tiết về linh kiện  DSC based on 32-bit 56800EX core
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Table 24. NVM program/erase timing specifications (continued)
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
thversscr
Sector Erase high-voltage time
—
13
113
ms
1
thversall
Erase All high-voltage time
—
52
452
ms
1
1. Maximum time based on expectations at cycling end-of-life.
11.4.1.2 Flash timing specifications — commands
Table 25. Flash command timing specifications
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
trd1sec1k
Read 1s Section execution time (flash sector)
—
—
60
μs
1
tpgmchk
Program Check execution time
—
—
45
μs
1
trdrsrc
Read Resource execution time
—
—
30
μs
1
tpgm4
Program Longword execution time
—
65
145
μs
—
tersscr
Erase Flash Sector execution time
—
14
114
ms
2
trd1all
Read 1s All Blocks execution time
—
—
1.8
ms
1
trdonce
Read Once execution time
—
—
25
μs
1
tpgmonce
Program Once execution time
—
65
—
μs
—
tersall
Erase All Blocks execution time
—
88
650
ms
2
tvfykey
Verify Backdoor Access Key execution time
—
—
30
μs
1
tersallu
Erase All Blocks Unsecure execution time
—
88
650
ms
2
1. Assumes 25 MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
11.4.1.3 Flash high voltage current behaviors
Table 26. Flash high voltage current behaviors
Symbol
Description
Min.
Typ.
Max.
Unit
IDD_PGM
Average current adder during high voltage
flash programming operation
—
2.5
6.0
mA
IDD_ERS
Average current adder during high voltage
flash erase operation
—
1.5
4.0
mA
11.4.1.4 Reliability specifications
Table 27. NVM reliability specifications
Symbol
Description
Min.
Typ.1
Max.
Unit
Notes
Program Flash
tnvmretp10k Data retention after up to 10 K cycles
5
50
—
years
—
tnvmretp1k Data retention after up to 1 K cycles
20
100
—
years
—
Table continues on the next page...
System modules
MC56F81xxx, Rev. 1.1, 12/2020
54
NXP Semiconductors



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