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STM32F334C8U6TR bảng dữ liệu(PDF) 70 Page - STMicroelectronics

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STM32F334C8U6TR bảng dữ liệu(HTML) 70 Page - STMicroelectronics

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Electrical characteristics
STM32F334x4 STM32F334x6 STM32F334x8
70/125
DS9994 Rev 9
Note:
For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available at the ST website www.st.com.
Figure 18. Typical application with a 32.768 kHz crystal
Note:
An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden
to add one.
6.3.8
Internal clock source characteristics
The parameters given in Table 40 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 19.
gm
Oscillator
transconductance
LSEDRV[1:0]=00
lower-driving capability
5-
-
µA/V
LSEDRV[1:0]=10
medium low-driving
capability
8-
-
LSEDRV[1:0]=01
medium high-driving
capability
15
-
-
LSEDRV[1:0]=11
higher-driving capability
25
-
-
tSU(LSE)(3) Startup time
VDD is stabilized
-
2
-
s
1. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator
design guide for ST microcontrollers”.
2. Guaranteed by design, not tested in production.
3.
tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized
32.768 kHz oscillation is reached. This value is measured for a standard crystal and it can vary significantly
with the crystal manufacturer.
Table 39. LSE oscillator characteristics (fLSE = 32.768 kHz) (continued)
Symbol
Parameter
Conditions(1)
Min.(2)
Typ. Max.(2)
Unit
MS19876V1
(1)
OSC_IN
OSC_OUT
RF
Bias
controlled
gain
fHSE
REXT
8 MHz
resonator
Resonator with integrated
capacitors
CL1
CL2



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