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STM32F722IC bảng dữ liệu(PDF) 161 Page - STMicroelectronics

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DS11853 Rev 6
161/229
STM32F722xx STM32F723xx
Electrical characteristics
201
6.3.25
Temperature sensor characteristics
6.3.26
VBAT monitoring characteristics
6.3.27
Reference voltage
The parameters given in Table 76 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 16.
Table 73. Temperature sensor characteristics
Symbol
Parameter
Min
Typ
Max
Unit
TL(1)
VSENSE linearity with temperature
-
±1
±2°C
Avg_Slope(1) Average slope
-
2.5
-
mV/°C
V25(1)
Voltage at 25 °C
-
0.76
-
V
tSTART(2)
Startup time
-
6
10
µs
TS_temp(2)
ADC sampling time when reading the temperature (1 °C accuracy)
10
-
-
µs
1. Guaranteed by characterization results.
2. Guaranteed by design.
Table 74. Temperature sensor calibration values
Symbol
Parameter
Memory address
TS_CAL1
TS ADC raw data acquired at temperature of 30 °C, VDDA= 3.3 V
0x1FF0 7A2C - 0x1FF0 7A2D
TS_CAL2
TS ADC raw data acquired at temperature of 110 °C, VDDA= 3.3 V 0x1FF0 7A2E - 0x1FF0 7A2F
Table 75. VBAT monitoring characteristics
Symbol
Parameter
Min
Typ
Max
Unit
R
Resistor bridge for VBAT
-50-
K
Ω
Q
Ratio on VBAT measurement
-
4
-
-
Er(1)
Error on Q
–1
-
+1
%
TS_vbat(2)(2)
ADC sampling time when reading the VBAT
1 mV accuracy
5-
-
µs
1. Guaranteed by design.
2. Shortest sampling time can be determined in the application by multiple iterations.
Table 76. internal reference voltage
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VREFINT
Internal reference voltage
–40 °C < TA < +105 °C 1.18
1.21
1.24
V
TS_vrefint(1)
ADC sampling time when reading the
internal reference voltage
-10
-
-
µs
VRERINT_s(2)
Internal reference voltage spread over the
temperature range
VDD = 3V ± 10mV
-
3
5
mV



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