Datasheet

17 of 24

V 2.21

www.infineon.com/soi

2020-07-07

2ED2181 (4) S06F (J)

650 V high-side and low-side driver with integrated bootstrap diode

of the driver IC. One should therefore do temperature measurements in order to avoid thermal overload under

application relevant conditions of ambient temperature and housing.

The dissipated power Pd by the driver IC is a combination of several sources. These are explained in detail in the

application note “Advantages of Infineon’s Silicon on Insulator (SOI) technology based High Voltage Gate Driver

ICs (HVICs)”

The output section is the major contributor for the power dissipation of the gate driver IC. The external gate

resistors also contribute to the power disspation of the gate driver IC. The bigger the external gate resistor, the

smaller the power dissipation in the gate driver.

The losses of the output section are calculated by means of the total gate charge of the power MOSFET or IGBT

cases for turn-on and turn-off must be considered, because many designs use different resistors for turn-on and

Turn on losses:

Turn off losses:

The above two losses are then added to the remaining static losses within the gate driver IC and we arrive at the

below figure which estimates the gate driver IC temperature rise when switching a given MOSFET or IGBT at

different switching frequencies.

Figure 20 Estimated temperature rise in the 2ED218x family gate drivers for different switching

20

40

60

80

100

120

140

10.00

100.00

Switching Frequency (kHz)

2ED218xS06F family gate drivers

temperature rise

IPW60R037P7

IPP60R180P7

IPP60R360P7

20

40

60

80

100

120

140

10.00

100.00

Switching Frequency (kHz)

2ED218xS06J family gate drivers

temperature rise

IPW60R037P7

IPP60R180P7

IPP60R360P7