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2ED2181S06F bảng dữ liệu(PDF) 7 Page - Infineon Technologies AG

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Giải thích chi tiết về linh kiện  650 V high-side and low-side gate driver with integrated bootstrap diode
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Datasheet
7 of 24
V 2.21
www.infineon.com/soi
2020-07-07
2ED2181 (4) S06F (J)
650 V high-side and low-side driver with integrated bootstrap diode
4.3
Static electrical characteristics
(VCC– COM) = (VB– VS) = 15 V, VSS= COM and TA = 25 °C unless otherwise specified. The VIL, VIH and IIN parameters are
referenced to Vss / COM and are applicable to the respective input leads: HIN and LIN. The VO and IO parameters
are referenced to VS / COM and are applicable to the respective output leads HO or LO. The VCCUV parameters are
referenced to COM. The VBSUV parameters are referenced to VS.
Table 5
Static electrical characteristics
1
Not subjected to production test, verified by characterization.
Symbol
Definition
Min.
Typ.
Max.
Units
Test Conditions
VBSUV+
VBS supply undervoltage positive going
threshold
7.6
8.2
8.9
V
VBSUV-
VBS supply undervoltage negative going
threshold
6.7
7.2
8.1
VBSUVHY VBS supply undervoltage hysteresis
—
1.0
—
VCCUV+
VCC supply undervoltage positive going
threshold
8.4
9.1
9.8
VCCUV-
VCC supply undervoltage negative going
threshold
7.5
8.2
8.9
VCCUVHY VCC supply undervoltage hysteresis
—
0.9
—
ILK
High-side floating well offset supply leakage
—
1
12.5
uA
VB = VS = 650 V
IQBS
Quiescent VBS supply current
—
170
—
All inputs are in
the off state
IQCC
Quiescent VCC supply current
—
300
—
VOH High level output voltage drop, Vcc- VLO, VB- VHO
—
0.05
0.2
V
IO= 20 mA
VOL
Low level output voltage drop, VO
—
0.02
0.1
Io+mean Mean output current from 3 V to 6 V
1.65
2.2
—
A
CL = 22 nF
Io+
Peak output current turn-on1
—
2.5
—
VO= 0 V
PW ≤ 10 µs
Io-mean Mean output current from 12 V to 9 V
1.65
2.2
—
CL = 22 nF
Io-
Peak output current turn-off1
—
2.5
—
VO= 15 V
PW ≤ 10 µs
VIH
Logic “1” input voltage
1.7
2.1
2.4
V
Vcc
=10 V to 20 V
VIL
Logic “0” input voltage
0.7
0.9
1.1
IIN+
Input bias current (Output = High)
—
25
50
µA
VIN = 5 V
IIN-
Input bias current (Output = Low)
—
—
1
VIN = 0 V
VFBSD
Bootstrap diode forward voltage between Vcc
and VB
—
1
1.2
V
IF=0.3 mA
IFBSD
Bootstrap diode forward current between Vcc
and VB
55
100
145
mA
VCC-VB=4 V
RBSD Bootstrap diode resistance
15
25
40
Ω
VF1=4V,VF2=5 V
VS
Allowable Negative VS pin voltage for IN
Signal propagation to HO
—
-11
-10
V
Vcc
=15 V



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