Datasheet

16 of 24

V 2.21

www.infineon.com/soi

2020-07-07

2ED2181 (4) S06F (J)

650 V high-side and low-side driver with integrated bootstrap diode

Figure 18

Negative VS transient SOA for 2ED2181(4)S06F(J) @ VBS=15 V

Even though the 2ED2181S06F(J) has been shown able to handle these large negative VS transient conditions, it

is highly recommended that the circuit designer always limit the negative VS transients as much as possible by

careful PCB layout and component use.

5.11

Higher headroom for input to output signal transmission with logic

operation upto -11 V

If there is not enough voltage for the level shifter to transmit a valid signal to the high side.High side driver doesn’t

COM is the supply voltage of level shifter. Under the condition of VS is negative voltage with respect to COM, the

voltage of VS - COM is decreased, as shown in Figure 19. There is a minimum operational supply voltage of level

VS

- 11 V

COM

Figure 19

Headroom for HV level shifter data transmission

5.12

Maximum switching frequency

The 2ED218x family is capable of switching at higher frequencies as compared to standard half-bridge or high

side / low side gate drivers. They are available in two packages, the PG-DSO-8 and the PG-DSO-14. It is essential

to ensure that the component is not thermally overloaded when operating at higher frequencies. This can be

checked by means of the thermal resistance junction to ambient and the calculation or measurement of the

dissipated power. The thermal resistance is given in the datasheet (section 4) and refers to a specific layout.

Changes of this layout may lead to an increased thermal resistance, which will reduce the total dissipated power

Recommended safe operating area