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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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DRV8428PDYYR bảng dữ liệu(PDF) 8 Page - Texas Instruments |
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DRV8428PDYYR bảng dữ liệu(HTML) 8 Page - Texas Instruments |
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8 / 46 page  8 DRV8428E, DRV8428P SLOSE51 – JUNE 2020 www.ti.com Product Folder Links: DRV8428E DRV8428P Submit Documentation Feedback Copyright © 2020, Texas Instruments Incorporated 6.5 Electrical Characteristics Typical values are at TA = 25°C and VVM = 24 V. All limits are over recommended operating conditions, unless otherwise noted. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT POWER SUPPLIES (VM, DVDD) IVM VM operating supply current nSLEEP = 1, No motor load 5 6.5 mA IVMQ VM sleep mode supply current nSLEEP = 0 2 4 μA tSLEEP Sleep time nSLEEP = 0 to sleep-mode 120 μs tRESET nSLEEP reset pulse nSLEEP low to clear fault 20 40 μs tWAKE Wake-up time nSLEEP = 1 to output transition 0.8 1.2 ms tON Turn-on time VM > UVLO to output transition 0.8 1.2 ms VDVDD Internal regulator voltage No external load, 6 V < VVM < 33 V 4.5 5 5.5 V LOGIC-LEVEL INPUTS (APH, AEN, BPH, BEN, AIN1, AIN2, BIN1, BIN2, nSLEEP) VIL Input logic-low voltage 0 0.6 V VIH Input logic-high voltage 1.5 5.5 V VHYS Input logic hysteresis 150 mV IIL Input logic-low current VIN = 0 V –1 1 μA IIH Input logic-high current VIN = 5 V 100 μA tPD Propagation delay xPH, xEN, xINx input to current change 750 ns SEVEN-LEVEL INPUT (DECAY/TOFF) VI1 Voltage level 1 Tied to GND 0 0.1 V VI2 Voltage level 2 14.7k Ω ± 1% to GND 0.2 0.35 V VI3 Voltage level 3 44.2k Ω ± 1% to GND 0.55 0.8 V VI4 Voltage level 4 100k Ω ± 1% to GND 1 1.25 V VI5 Voltage level 5 249k Ω ± 1% to GND 1.5 1.75 V VI6 Voltage level 6 Hi-Z 2.1 2.35 V VI7 Voltage level 7 Tied to DVDD 3 5.5 V IO Output pull-up current 22.5 μA MOTOR DRIVER OUTPUTS (AOUT1, AOUT2, BOUT1, BOUT2) RDS(ONH) High-side FET on resistance VVM = 24 V, TJ = 25 °C, IO = -0.5 A 750 900 m Ω VVM = 24 V, TJ = 125 °C, IO = -0.5 A 1130 1400 m Ω VVM = 24 V, TJ = 150 °C, IO = -0.5 A 1250 1590 m Ω RDS(ONL) Low-side FET on resistance VVM = 24 V, TJ = 25 °C, IO = 0.5 A 750 900 m Ω VVM = 24 V, TJ = 125 °C, IO = 0.5 A 1130 1400 m Ω VVM = 24 V, TJ = 150 °C, IO = 0.5 A 1250 1590 m Ω tSR Output slew rate VM = 24V, IO = 0.5 A, Between 10% and 90% 240 V/µs PWM CURRENT CONTROL (VREFA, VREFB) KV Transimpedance gain VREF = 3 V 2.85 3 3.15 V/A tOFF PWM off-time, mixed 30% decay DECAY/TOFF = 14.7k Ω to GND 7 μs DECAY/TOFF = 44.2k Ω to GND 16 DECAY/TOFF = 100k Ω to GND 32 PWM off-time, smart tune dynamic decay DECAY/TOFF = 249k Ω to GND 7 DECAY/TOFF = Hi-Z 16 DECAY/TOFF = DVDD 32 ΔITRIP Current trip accuracy IO = 1 A, 10% to 20% current setting –15 15 % IO = 1 A, 20% to 67% current setting –10 10 IO = 1 A, 68% to 100% current setting -5 5 |
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