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DRV8428PDYYR bảng dữ liệu(PDF) 6 Page - Texas Instruments |
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DRV8428PDYYR bảng dữ liệu(HTML) 6 Page - Texas Instruments |
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6 / 46 page ![]() 6 DRV8428E, DRV8428P SLOSE51 – JUNE 2020 www.ti.com Product Folder Links: DRV8428E DRV8428P Submit Documentation Feedback Copyright © 2020, Texas Instruments Incorporated Table 2. Pin Functions (continued) PIN TYPE DESCRIPTION NAME PWP, DYY RTE DRV84 28E DRV8428P DRV84 28E DRV8428P DVDD 8 8 6 6 PWR Logic supply voltage. Connect a X7R, 0.47-μF, 6.3-V or 10-V rated ceramic capacitor to GND. VM 1 1 15 15 PWR Power supply. Connect to motor supply voltage and bypass to GND with a 0.01-μF ceramic capacitor plus a bulk capacitor rated for VM. PGND 2 2 16 16 PWR Power ground. Connect to system ground. nSLEEP 16 16 14 14 I Sleep mode input. Logic high to enable device; logic low to enter low-power sleep mode; internal pulldown resistor. An nSLEEP low pulse clears faults. PAD - - - - - Thermal pad. Connect to system ground. (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range referenced with respect to GND (unless otherwise noted) (1) MIN MAX UNIT Power supply voltage (VM) –0.3 35 V nSLEEP pin voltage (nSLEEP) –0.3 VVM V Internal regulator voltage (DVDD) –0.3 5.75 V Control pin voltage (APH, AEN, BPH, BEN, AIN1, AIN2, BIN1, BIN2, DECAY/TOFF) –0.3 5.75 V Reference input pin voltage (VREFA, VREFB) –0.3 5.75 V Continuous phase node pin voltage (AOUT1, AOUT2, BOUT1, BOUT2) –1 VVM + 1 V Transient 100 ns phase node pin voltage (AOUT1, AOUT2, BOUT1, BOUT2) –3 VVM + 3 V Peak drive current (AOUT1, AOUT2, BOUT1, BOUT2) Internally Limited A Operating ambient temperature, TA –40 125 °C Operating junction temperature, TJ –40 150 °C Storage temperature, Tstg –65 150 °C 6.2 ESD Ratings VALUE UNIT V(ES D) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 ±2000 V Charged-device model (CDM), per JEDEC specification JESD22-C101 Corner pins for PWP (1, 8, 9, and 16) ±750 Other pins ±500 |
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