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DRV8428PDYYR bảng dữ liệu(PDF) 6 Page - Texas Instruments

tên linh kiện DRV8428PDYYR
Giải thích chi tiết về linh kiện  DRV8428E/P Dual H-Bridge Motor Drivers With Integrated Current Sense and Smart Tune Technology
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DRV8428E, DRV8428P
SLOSE51 – JUNE 2020
www.ti.com
Product Folder Links: DRV8428E DRV8428P
Submit Documentation Feedback
Copyright © 2020, Texas Instruments Incorporated
Table 2. Pin Functions (continued)
PIN
TYPE
DESCRIPTION
NAME
PWP, DYY
RTE
DRV84
28E
DRV8428P
DRV84
28E
DRV8428P
DVDD
8
8
6
6
PWR
Logic supply voltage. Connect a X7R, 0.47-μF, 6.3-V or 10-V
rated ceramic capacitor to GND.
VM
1
1
15
15
PWR
Power supply. Connect to motor supply voltage and bypass to
GND with a 0.01-μF ceramic capacitor plus a bulk capacitor
rated for VM.
PGND
2
2
16
16
PWR
Power ground. Connect to system ground.
nSLEEP
16
16
14
14
I
Sleep mode input. Logic high to enable device; logic low to enter
low-power sleep mode; internal pulldown resistor. An nSLEEP
low pulse clears faults.
PAD
-
-
-
-
-
Thermal pad. Connect to system ground.
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range referenced with respect to GND (unless otherwise noted)
(1)
MIN
MAX
UNIT
Power supply voltage (VM)
–0.3
35
V
nSLEEP pin voltage (nSLEEP)
–0.3
VVM
V
Internal regulator voltage (DVDD)
–0.3
5.75
V
Control pin voltage (APH, AEN, BPH, BEN, AIN1, AIN2, BIN1, BIN2, DECAY/TOFF)
–0.3
5.75
V
Reference input pin voltage (VREFA, VREFB)
–0.3
5.75
V
Continuous phase node pin voltage (AOUT1, AOUT2, BOUT1, BOUT2)
–1
VVM + 1
V
Transient 100 ns phase node pin voltage (AOUT1, AOUT2, BOUT1, BOUT2)
–3
VVM + 3
V
Peak drive current (AOUT1, AOUT2, BOUT1, BOUT2)
Internally Limited
A
Operating ambient temperature, TA
–40
125
°C
Operating junction temperature, TJ
–40
150
°C
Storage temperature, Tstg
–65
150
°C
6.2 ESD Ratings
VALUE
UNIT
V(ES
D)
Electrostatic
discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
±2000
V
Charged-device model (CDM), per JEDEC specification JESD22-C101
Corner pins for PWP (1, 8,
9, and 16)
±750
Other pins
±500



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