BAS116L datasheet(3/12 Pages) NEXPERIA

3 / 12 page

Nexperia

BAS116L

Low-leakage diode

BAS116L

All information provided in this document is subject to legal disclaimers.

Product data sheet

4 May 2016

3 / 12

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

reverse voltage

VRRM

repetitive peak reverse

voltage

Tj = 25 °C

forward current

Tamb = 25 °C

[1]

325

IFRM

repetitive peak forward

current

tp ≤ 0.5 ms; δ ≤ 0.25 ; Tj = 25 °C

700

tp = 100 µs; Tj(init) = 25 °C; square wave

tp = 1 ms; Tj(init) = 25 °C; square wave

1.5

IFSM

non-repetitive peak

forward current

tp = 1 s; Tj(init) = 25 °C; square wave

0.5

[1]

335

Ptot

total power dissipation

Tamb ≤ 25 °C

[2]

610

junction temperature

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².

Tamb (°C)

175

125

150

100

aaa-022907

0.2

0.1

0.3

0.4

(mA)

FR4 PCB, standard footprint

Fig. 1. Forward current as a function of ambient temperature; derating curve

BAS116L bảng dữ liệu(PDF) 3 Page - Nexperia B.V. All rights reserved

BAS116L bảng dữ liệu(HTML) 3 Page - Nexperia B.V. All rights reserved

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

bảng dữ liệu tải về

Link URL