V62SLASH12615-01XE-R datasheet(12/98 Pages) TI1

12 / 98 page

DP83848-EP

SLLSEC6E – SEPTEMBER 2012 – REVISED JUNE 2019

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Specifications

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

Specifications

4.1

Absolute Maximum Ratings

(1)

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

VCC

Supply voltage

–0.5

4.2

VIN

DC input voltage

–0.5

VCC + 0.5

VOUT

DC output voltage

–0.5

VCC + 0.5

TSTG

Storage temperature

–65

150

°C

Operating junction temperature

–55

150

°C

Lead temperature (soldering, 10 seconds)

260

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

4.2

ESD Ratings

RZAP = 1.5 kΩ, CZAP = 100 pF

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±4000

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±1500

(1)

Provided that Thermal Pad is soldered down.

4.3

Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VCC

Supply voltage

3.6

Operating free-air temperature(1)

–55

125

°C

Power dissipation

267

(1)

For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

4.4

Thermal Information

THERMAL METRIC(1)

DP83848-EP

UNITS

PHP

PTB

48 PINS

θJA

Junction-to-ambient thermal resistance

35.74

49.0

°C/W

θJCtop

Junction-to-case (top) thermal resistance

21.8

62.9

°C/W

θJB

Junction-to-board thermal resistance

19.5

30.4

°C/W

ψJT

Junction-to-top characterization parameter

1.2

7.3

°C/W

ψJB

Junction-to-board characterization parameter

19.4

30.3

°C/W

θJCbot

Junction-to-case (bottom) thermal resistance

3.2

9.5

°C/W

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