GD25B32CSIG datasheet(18/56 Pages) GIGADEVICE

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3.3V Uniform Sector

Dual and Quad Serial Flash

GD25B32C

Figure 5. Write Status Register Sequence Diagram

7.6. Read Data Bytes (READ) (03H)

The Read Data Bytes (READ) command is followed by a 3-byte address (A23-A0), each bit being latched-in during

the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO, each bit being shifted out, at a

Max frequency fR, during the falling edge of SCLK. The first byte addressed can be at any location. The address is

automatically incremented to the next higher address after each byte of data is shifted out. The whole memory can,

therefore, be read with a single Read Data Bytes (READ) command. Any Read Data Bytes (READ) command, while an

Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is in progress.

Figure 6. Read Data Bytes Sequence Diagram

7.7. Read Data Bytes at Higher Speed (Fast Read) (0BH)

The Read Data Bytes at Higher Speed (Fast Read) command is for quickly reading data out. It is followed by a 3-byte

address (A23-A0) and a dummy byte, each bit being latched-in during the rising edge of SCLK. Then the memory content,

at that address, is shifted out on SO, each bit being shifted out, at a Max frequency fC, during the falling edge of SCLK. The

first byte addressed can be at any location. The address is automatically incremented to the next higher address after each

byte of data is shifted out.

Command

01H/31H/11H

CS#

SCLK

High-Z

9 10 11 12 13 14 15

MSB

Status Register in

Command

03H

CS#

SCLK

High-Z

9 10

28 29 30 31 32

MSB

34 35 36 37

23 22 21

38 39

24-bit address

MSB

Data Out1

Data Out2

GD25B32CSIG bảng dữ liệu(PDF) 18 Page - GigaDevice Semiconductor (Beijing) Inc.