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ADM1266ACPZ-R7 bảng dữ liệu(PDF) 27 Page - Analog Devices

tên linh kiện ADM1266ACPZ-R7
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ADM1266ACPZ-R7 bảng dữ liệu(HTML) 27 Page - Analog Devices

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Data Sheet
ADM1266
Rev. A | Page 27 of 62
Nondestructive operation above TJ = 85°C is possible. However,
the electrical specifications are not guaranteed and, in this case, the
EEPROM degrades. Operating the EEPROM above TJ = 85°C
may result in a degradation of retention characteristics. The fault
logging function, which is useful in debugging system problems
that may occur at high temperatures, only writes to fault log
EEPROM locations. If occasional writes to these registers occur
above TJ = 85°C, a slight degradation in the data retention
characteristics of the fault log may occur. It is recommended
that the EEPROM not be written using STORE_USER_ALL
or bulk programming when TJ > 85°C. The degradation in
EEPROM retention for temperatures TJ > 85°C can be
approximated by calculating the dimensionless acceleration
factor using the following equation:
11
273
273
USE
STRESS
Ea
kT
T
AF
e

 ×−



++
 

=
where:
AF is the acceleration factor.
Ea, the activation energy, = 0.6 eV.
k = 8.617 × 10−5 eV/°K.
TUSE = 85°C, the specified junction temperature.
TSTRESS is the actual junction temperature.
For example, calculate the effect on retention when operating at
a junction temperature of 125°C for 10 hours.
TSTRESS = 125°C
AF = 7.062
The equivalent operating time at 85°C = 70.62 hours.
Therefore, the overall retention of the EEPROM degrades by
60.62 hours as a result of operation at a junction temperature of
125°C for 10 hours. The effect of this overstress is negligible
when compared to the overall EEPROM retention rating of
87,600 hours at a maximum junction temperature of 85°C.



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