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iC-HTG

POWER CW LASER DIODE DRIVER

Rev A1, Page 7/40

ELECTRICAL CHARACTERISTICS

Operating Conditions: VB = 3 . . . 24 V (relative to GND), Tj = -40 . . . 125 °C unless otherwise stated

Item

Symbol

Parameter

Conditions

Unit

No.

Min.

Typ.

Max.

General

Functionality and parameters beyond the operating conditions (with reference to independent voltage supplies, for instance) are to be

verified within the individual application using FMEA methods.

001 VB

Permissible Supply Voltage

Relative to GND

3

24

V

002 I(VB)

Standby Current at VB

V(NSTBY) ≤ 0.4 V,

VB = 3. . . 11 V

10

µA

VB = 11. . . 24 V

30

µA

003 I(VBL)

Standby Current at VBL

V(NSTBY) ≤ 0.4 V,

VBL = 3. . . 11 V

5

µA

VBL = 11. . . 24 V

10

µA

004 I(VB)

Supply Current at VB

No load, EC, NSTBY = hi

5

mA

005 I(VBL)

Supply Current at VBL

No load, EC, NSTBY = hi

25

mA

006 V(VB)on

Turn-on threshold at VB, VBL

Increasing VB, VBL

1

2.9

V

007 V(VB)off

Turn-off threshold at VB, VBL

Decreasing VB, VBL

0.8

2.6

V

008 V(VB)Hys Power-on hysteresis at VB, VBL

20

250

mV

009 V(VDD)on Turn-on threshold

Increasing VDD

1.3

2.4

V

010 V(VDD)off Turn-off threshold

Decreasing VDD

1.2

2.3

V

011 V(VDD)Hys Power-on hysteresis

20

250

mV

012 V(VB)INITR RAM memory reset during

Stand-By

NSTBY = lo

0.85

1.4

V

013 RCIL()

Resistor between GND and CIL

20

Ω

014 Vc()lo

Clamp Voltage lo at VB,

VBL, VDD, NCHK, NCS/A1,

MISO/SDA, MOSI/A0,

SCLK/SCL, INS, NSTBY, EC,

DCO, CI, MD, MR, MCH, MCL,

VRP, VRN, MOD

I() = -10 mA

-1.6

-0.3

V

Transistor Driver VRx, CIx, MCx, MR, MD

101 C(CI)

Required capacitor at CI

CW

1000

pF

Analog Modulation

80

pF

102 I(CI)

Charge Current at CI

V(CI) = 0 V, CI regulated

-30

-5

µA

103 V(MCx)

Permisible Voltage at MCH, MCL EC = hi, NSTBY = hi

MCVR = lo

0

5

V

MCVR = hi

VBL-5

VBL

V

104 Tci

Permisible Voltage at MR, MD

EC = hi, NSTBY = hi

EPNNP = lo

0

1.2

V

EPNNP = hi

VDD-1.2

VDD

V

105 I(VRx)max Short Circuit Current at VRP,

VRN

EC = hi, NSTBY = hi

V(VRP) = 1.5 V . . . VBL V

-200

mA

V(VRN) = 1.5 V . . . VBL V; VRNHR = hi

200

mA

V(VRN) = 0 V . . . VBL-1.5 V; VRNHR = lo

200

mA

106 V(VRP)

Voltage output range

|I(VRP)| < 1mA

1

VBL

V

107 V(VRN)

Voltage output range

|I(VRN)| < 1mA

VRNHR = lo

0

VBL-1.5

V

VRNHR = hi

1

VBL

V

108 Ten

Time to laser enabled

NSTBY lo → hi, no load at VDD,

1.3

ms

V(VDD) 0 to 90 %,

CVDD = 1 µF

Programmable Resistor

201 Rmda

Resistor at MD and MR pin

RMD(7:0) = 0xFF, DISP = 0

350

500

650

kΩ

RMD(7:0) = 0x00, DISP = 0

0.154

0.220

0.286

kΩ

202 Tk

Temperature coefficient

-500

ppm/K