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TDA8060ATS bảng dữ liệu(PDF) 8 Page - NXP Semiconductors

tên linh kiện TDA8060ATS
Giải thích chi tiết về linh kiện  Satellite ZERO-IF QPSK down-converter
PDF  16 Pages
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nhà sản xuất  PHILIPS [NXP Semiconductors]
Trang chủ  http://www.nxp.com
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TDA8060ATS bảng dữ liệu(HTML) 8 Page - NXP Semiconductors

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2000 Nov 10
8
Philips Semiconductors
Product specification
Satellite ZERO-IF QPSK down-converter
TDA8060ATS
Notes
1. This parameter is very dependent on the application; the range represents the capacity of the oscillator.
2. Measured in baseband (at pin IOUT or pin QOUT) on a carrier at 2 MHz and 25 dBmV.
3. fLO = 1000 MHz; RF wanted = 1005 MHz; RF unwanted = 2002 MHz (see Fig.3). Done on the demo board
OM5732.
4. Quadrature error with respect to 90
°.
5. The differential input impedance of the IC is 34
Ω in series with the IC pins which give an inductance of 5 nH.
For optimum performance, this inductance should be cancelled by a matching network. Coupling capacitors of 1 pF
give an acceptable result.
6. Gain = Vo(dB) − Vi(dB) (see Fig.4). Gain for symmetrical RF input.
B(−3dB)
channel
−3 dB bandwidth
−
80
−
MHz
Zo
output impedance
−
50
−Ω
Vo(p-p)
output voltage level (peak-to-peak value)
note 8
−
1
−
V
Ro(L)
resistive load at output
400
−−Ω
Overall with a 100 nF capacitor instead of LP1 and LP2
td(g)(I-Q)(40)
group delay mismatch in 40 MHz band
between I and Q
−
0.5
2
ns
td(g)(I-Q)(R40)
group delay ripple in 40 MHz band for I or Q
−
0.5
1
ns
Gv(I-Q)(40)
voltage gain mismatch in 40 MHz band
between I and Q
−−
1dB
GR(I-Q)(40)
voltage gain ripple in 40 MHz band for I or Q
−−
1dB
SYMMETRICAL RF INPUT
Gv(RF-IBBOUT)(min)
minimum voltage gain from RF input to
pin IBBOUT
VAGC = 0.1VCC
−
26
−
dB
Gv(RF-IBBOUT)(max)
maximum voltage gain from RF input to
pin IBBOUT
VAGC = 0.9VCC
−
63
−
dB
Gv(RF-QBBOUT)(min)
minimum voltage gain from RF input to
pin QBBOUT
VAGC = 0.1VCC
−
26
−
dB
Gv(RF-QBBOUT)(max) maximum voltage gain from RF input to
pin QBBOUT
VAGC = 0.9VCC
−
63
−
dB
Fi
noise figure at maximum gain
VAGC = 0.9VCC;
Zsource =50 Ω
−
13
16
dB
ASYMMETRICAL RF INPUT
Gv(RF-IBBOUT)(min)
minimum voltage gain from RF input to
pin IBBOUT
VAGC = 0.1VCC
−
26
−
dB
Gv(RF-IBBOUT)(max)
maximum voltage gain from RF input to
pin IBBOUT
VAGC = 0.9VCC
−
63
−
dB
Gv(RF-QBBOUT)(min)
minimum voltage gain from RF input to
pin QBBOUT
VAGC = 0.1VCC
−
26
−
dB
Gv(RF-QBBOUT)(max) maximum voltage gain from RF input to
pin QBBOUT
VAGC = 0.9VCC
−
63
−
dB
Fi
noise figure at maximum gain
VAGC = 0.9VCC;
Zsource =50 Ω
−
14
−
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT



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