| công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
|
TDA8060ATS bảng dữ liệu(PDF) 8 Page - NXP Semiconductors |
|
|
|||||||||||||||||||||||||||||
TDA8060ATS bảng dữ liệu(HTML) 8 Page - NXP Semiconductors |
|
8 / 16 page ![]() 2000 Nov 10 8 Philips Semiconductors Product specification Satellite ZERO-IF QPSK down-converter TDA8060ATS Notes 1. This parameter is very dependent on the application; the range represents the capacity of the oscillator. 2. Measured in baseband (at pin IOUT or pin QOUT) on a carrier at 2 MHz and 25 dBmV. 3. fLO = 1000 MHz; RF wanted = 1005 MHz; RF unwanted = 2002 MHz (see Fig.3). Done on the demo board OM5732. 4. Quadrature error with respect to 90 °. 5. The differential input impedance of the IC is 34 Ω in series with the IC pins which give an inductance of 5 nH. For optimum performance, this inductance should be cancelled by a matching network. Coupling capacitors of 1 pF give an acceptable result. 6. Gain = Vo(dB) − Vi(dB) (see Fig.4). Gain for symmetrical RF input. B(−3dB) channel −3 dB bandwidth − 80 − MHz Zo output impedance − 50 −Ω Vo(p-p) output voltage level (peak-to-peak value) note 8 − 1 − V Ro(L) resistive load at output 400 −−Ω Overall with a 100 nF capacitor instead of LP1 and LP2 td(g)(I-Q)(40) group delay mismatch in 40 MHz band between I and Q − 0.5 2 ns td(g)(I-Q)(R40) group delay ripple in 40 MHz band for I or Q − 0.5 1 ns Gv(I-Q)(40) voltage gain mismatch in 40 MHz band between I and Q −− 1dB GR(I-Q)(40) voltage gain ripple in 40 MHz band for I or Q −− 1dB SYMMETRICAL RF INPUT Gv(RF-IBBOUT)(min) minimum voltage gain from RF input to pin IBBOUT VAGC = 0.1VCC − 26 − dB Gv(RF-IBBOUT)(max) maximum voltage gain from RF input to pin IBBOUT VAGC = 0.9VCC − 63 − dB Gv(RF-QBBOUT)(min) minimum voltage gain from RF input to pin QBBOUT VAGC = 0.1VCC − 26 − dB Gv(RF-QBBOUT)(max) maximum voltage gain from RF input to pin QBBOUT VAGC = 0.9VCC − 63 − dB Fi noise figure at maximum gain VAGC = 0.9VCC; Zsource =50 Ω − 13 16 dB ASYMMETRICAL RF INPUT Gv(RF-IBBOUT)(min) minimum voltage gain from RF input to pin IBBOUT VAGC = 0.1VCC − 26 − dB Gv(RF-IBBOUT)(max) maximum voltage gain from RF input to pin IBBOUT VAGC = 0.9VCC − 63 − dB Gv(RF-QBBOUT)(min) minimum voltage gain from RF input to pin QBBOUT VAGC = 0.1VCC − 26 − dB Gv(RF-QBBOUT)(max) maximum voltage gain from RF input to pin QBBOUT VAGC = 0.9VCC − 63 − dB Fi noise figure at maximum gain VAGC = 0.9VCC; Zsource =50 Ω − 14 − dB SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT |
|
|
Link URL |
| Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không? [ DONATE ] |
Alldatasheet là | Quảng cáo | Liên lạc với chúng tôi | Chính sách bảo mật | Liên kết đến bảng dữ liệu | Trao đổi link | Tìm kiếm theo nhà sản xuất All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |